2N60H

KIA SEMICONDUCTORS 2.0A, 600V N-CHANNEL MOSFET 2N60H 1.Description The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 2. Features  RDS(ON)=4.1Ω@VGS=10V.  Low gate charge (typical 9nC)  High ruggedness  Fast switching capability  Avalanche energy specified  Improved dv/dt capability 3. Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Rev 1.1 JAN 2014 KIA SEMICONDUCTORS 2.0A, 600V N-CHANNEL MOSFET 2N60H 4. Absolute maximum ratings Parameter Symbol Drain-source voltage Gate-source voltage Drain current continuous TC=25ºC TC=100ºC Drain current pulsed (note1) Avalanche Enlsed Repetitive (note1) Single pulse (note2) Peak diode recovery dv/dt (note3) VDSS VGSS ID IDP EAR EAS dv/dt Total power dissipation TC=25ºC Derate above 25ºC PD Junction temperature TJ Storage temperature TSTG *Drain current limited by maximum junction temperature. (TC= 25ºC, unless otherwise noted) Rating 252/251 220 220F Units 600 V ±30 V 2.0* 2.0 2.0* A 1.35* 1.35 1.35* A 8* 8 8* A 4.4 mJ 120 mJ 4.5 V/ns 44 55.5 23.6 W 0.35 0.44 0.19 W/ ºC +150 ºC -50~+150 ºC 5. Thermal characteristics Parameter Thermal resistance,Junction-amient Thermal resistance,case-to-sink typ. Thermal resistance,Junction-case Symbol RthJA RthCS RthJC Rating 252/251 220 62.5 62.5 --...