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Part Number 22N55
Manufacturers IXYS
Logo IXYS
Description IXFH22N55
Datasheet 22N55 Datasheet22N55 Datasheet (PDF)

  22N55   22N55
HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr IXFH 22N55 VDSS ID (cont) RDS(on) trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt P D TJ TJM Tstg TL M d Weight Symbol V DSS VGS(th) I GSS I DSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W T C = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque Maximum Ratings 550 V 550 V ±20 V ±30 V 22 A 88 A 22 A 30 mJ 5 V/ns 300 W -55 ... +150 150 -55 ... +150 300 °C °C °C °C 1.13/10 Nm/lb.in. 6g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V GS = 0 V, I D = 250 mA VDS = VGS, ID = 4 mA V GS = ±20 V, DC V DS = 0 V = 0.8 • V DS DSS VGS = 0 V T J = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • I.



22N055 22N55 MC97F2664


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