Part Number |
22N055 |
Manufacturers |
Renesas |
Logo |
|
Description |
N-CHANNEL POWER MOSFET |
Datasheet |
22N055 Datasheet (PDF) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP22N055HHE, NP22N055IHE, NP22N055SHE
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated • Super low on-state resistance
RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low Ciss : Ciss = 590 pF TYP. • Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP22N055HHE NP22N055IHE Note
TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z
NP22N055SHE
TO-252 (JEDEC) / MP-3ZK
Note Not for new design.
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
Gate to Source Voltage
VGSS
±20
Drain Current (DC) Drain Current (Pulse) Note1
ID(DC) ID(pulse)
±22 ±55
Total Power Dissipation (TA = 25°C)
PT
1.2
Total Power Dissipation (TC = 25°C) Single Avalanche Current Note2 Single Avalanche Energy Note2
PT IAS EAS
45 13 / 5 16 / 25
Channel Temperature
Tch .