DatasheetsPDF.com



Part Number 22N055
Manufacturers Renesas
Logo Renesas
Description N-CHANNEL POWER MOSFET
Datasheet 22N055 Datasheet22N055 Datasheet (PDF)

  22N055   22N055
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HHE, NP22N055IHE, NP22N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low Ciss : Ciss = 590 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP22N055HHE NP22N055IHE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP22N055SHE TO-252 (JEDEC) / MP-3ZK Note Not for new design. (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 55 Gate to Source Voltage VGSS ±20 Drain Current (DC) Drain Current (Pulse) Note1 ID(DC) ID(pulse) ±22 ±55 Total Power Dissipation (TA = 25°C) PT 1.2 Total Power Dissipation (TC = 25°C) Single Avalanche Current Note2 Single Avalanche Energy Note2 PT IAS EAS 45 13 / 5 16 / 25 Channel Temperature Tch .



L-934GD-5V 22N055 22N55


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)