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MDV1525 Dataheets PDF



Part Number MDV1525
Manufacturers MagnaChip
Logo MagnaChip
Description Single N-channel MOSFET
Datasheet MDV1525 DatasheetMDV1525 Datasheet (PDF)

MDV1525 – Single N-Channel Trench MOSFET 30V MDV1525 Single N-channel Trench MOSFET 30V, 24A, 10.1mΩ General Description The MDV1525 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1525 is suitable for DC/DC converter and general purpose applications. Features VDS = 30V ID = 24A @VGS = 10V RDS(ON) < 10.1mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested DD DD DD DD D S .

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MDV1525 – Single N-Channel Trench MOSFET 30V MDV1525 Single N-channel Trench MOSFET 30V, 24A, 10.1mΩ General Description The MDV1525 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1525 is suitable for DC/DC converter and general purpose applications. Features VDS = 30V ID = 24A @VGS = 10V RDS(ON) < 10.1mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested DD DD DD DD D S SSG GS SS PDFN33 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC (Silicon limited) TC=25oC (Package limited) TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case May. 2011. Version1.2 1 G S Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating 30 ±20 37.2 24 24 13.8(3) 11.1(3) 60 24.5 15.6 3.4(3) 2.2(3) 48 -55~150 Unit V V A A W mJ oC Symbol RθJA RθJC Rating 36 5.1 Unit oC/W MagnaChip Semiconductor Ltd. MDV1525 – Single N-Channel Trench MOSFET 30V Ordering Information Part Number MDV1525URH Temp. Range -55~150oC Package PowerDFN33 Packing Tape & Reel Quantity 5000 units Rohs Status Halogen Free Electrical Characteristics (TJ = 25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Symbol BVDSS VGS(th) IDSS IGSS Drain-Source ON Resistance RDS(ON) Forward Transconductance Dynamic Characteristics Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge gfs Qg(10V) Qg(4.5V) Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf Rg VSD trr Qrr Test Condition ID = 250µA, VGS = 0V VDS = VGS, ID = 250µA VDS = 30V, VGS = 0V TJ=55oC VGS = ±20V, VDS = 0V VGS = 10V, ID = 11A TJ=125oC VGS = 4.5V, ID = 9A VDS = 5V, ID = 11A VDS = 15.0V, ID = 11A, VGS = 10V VDS = 15.0V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 15.0V, ID = 11A, RG = 3.0Ω f=1 MHz IS = 11A, VGS = 0V IF = 11A, dl/dt = 100A/µs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 16.8A, VDD = 27V, VGS = 10V 3. T < 10sec. Min Typ Max Unit 30 1.3 1.9 2.7 V -- 1 - - 5 µA - - ±0.1 - 8.2 10.1 - 11.9 14.6 mΩ - 11.5 14.0 - 27.3 - S 8.8 12.6 16.4 4.2 6.0 7.8 nC - 2.5 - - 1.8 - 568 811 1054 54 77 100 pF 108 154 200 - 6.8 - - 11.8 - 20.0 - ns - 7.1 - 1.0 1.6 3.0 Ω - 0.83 1.1 V - 22.2 33.3 ns - 13.8 20.7 nC May. 2011. Version1.2 2 MagnaChip Semiconductor Ltd. May. 2011. Version1.2 3 MagnaChip Semiconductor Ltd. MDV1525 – Single N-Channel Trench MOSFET 30V ID, Drain Current [A] MDV1525 – Single N-Channel Trench MOSFET 30V 20 4.5V 3.5V 15 8.0V VGS = 10V 10 5 3.0V 0 0.0 0.5 1.0 1.5 VDS, Drain-Source Voltage [V] Fig.1 On-Region Characteristics 2.0 1.8 VGS=10V ID=11.0A 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature [oC] Fig.3 On-Resistance Variation with Temperature DS(ON)R [mΩ ], Drain-Source On-Resistance Drain-Source On-Resistance [mΩ] 15 12 VGS = 4.5V 9 VGS = 10V 6 3 5 10 15 20 ID, Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 24 ※ Notes : 20 ID = 11.0A 16 12 8 TA = 25℃ 4 0 2 4 6 8 10 VGS, Gate to Source Volatge [V] Fig.4 On-Resistance Variation with Gate to Source Voltage RDS(ON), (Normalized) Drain-Source On-Resistance ID, Drain Current [A] 16 ※ Notes : VDS = 5V 12 8 TA=25℃ 4 0 01234 VGS, Gate-Source Voltage [V] Fig.5 Transfer Characteristics 5 IDR, Reverse Drain Current [A] ※ Notes : VGS = 0V 101 100 TA=25℃ 10-1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-Drain voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature May. 2011. Version1.2 4 MagnaChip Semiconductor Ltd. VGS, Gate-Source Voltage [V] MDV1525 – Single N-Channel Trench MOSFET 30V 10 ※ Note : ID = 11A 8 6 4 2 0 0 3 6 9 12 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 15 Capacitance [pF] 1200 900 Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 600 300 Coss Crss ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 0 0 5 10 15 20 25 VDS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics 30 ID, Drain Current [A] Operation in This Area is Limited by R DS(on) 102 10 ms 100 ms 101 1s 10s DC 100 Single Pulse 10-1 TJ=Max rated TC=25℃ 10-1 100 101 VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area 102 ID, Drain.


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