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MDV1525 – Single N-Channel Trench MOSFET 30V
MDV1525
Single N-channel Trench MOSFET 30V, 24A, 10.1mΩ
General Description
The MDV1525 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1525 is suitable for DC/DC converter and general purpose applications.
Features
VDS = 30V ID = 24A @VGS = 10V RDS(ON) < 10.1mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PDFN33
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC (Silicon limited) TC=25oC (Package limited) TC=70oC TA=25oC TA=70oC
TC=25oC TC=70oC TA=25oC TA=70oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
May. 2011. Version1.2
1
G S
Symbol VDSS VGSS
ID
IDM
PD
EAS TJ, Tstg
Rating
30 ±20 37.2 24 24 13.8(3) 11.1(3) 60 24.5 15.6 3.4(3) 2.2(3) 48 -55~150
Unit V V
A
A
W
mJ oC
Symbol RθJA RθJC
Rating 36 5.1
Unit oC/W
MagnaChip Semiconductor Ltd.
MDV1525 – Single N-Channel Trench MOSFET 30V
Ordering Information
Part Number MDV1525URH
Temp. Range -55~150oC
Package PowerDFN33
Packing Tape & Reel
Quantity 5000 units
Rohs Status Halogen Free
Electrical Characteristics (TJ = 25oC)
Characteristics Static Characteristics
Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS VGS(th) IDSS IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance Dynamic Characteristics
Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
gfs
Qg(10V) Qg(4.5V)
Qgs Qgd Ciss Crss Coss td(on) tr td(off)
tf Rg
VSD trr Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V TJ=55oC
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 11A
TJ=125oC
VGS = 4.5V, ID = 9A
VDS = 5V, ID = 11A
VDS = 15.0V, ID = 11A, VGS = 10V
VDS = 15.0V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 15.0V, ID = 11A, RG = 3.0Ω
f=1 MHz
IS = 11A, VGS = 0V IF = 11A, dl/dt = 100A/µs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 16.8A, VDD = 27V, VGS = 10V 3. T < 10sec.
Min Typ
Max Unit
30 1.3 1.9
2.7
V
-- 1
- - 5 µA
- - ±0.1
- 8.2 10.1
-
11.9
14.6
mΩ
- 11.5 14.0
- 27.3
-
S
8.8 12.6 16.4
4.2 6.0
7.8
nC
- 2.5
-
- 1.8
-
568 811 1054
54 77 100 pF
108 154
200
- 6.8
-
- 11.8 - 20.0
-
ns
- 7.1
-
1.0 1.6 3.0 Ω
- 0.83 1.1
V
-
22.2 33.3
ns
-
13.8 20.7
nC
May. 2011. Version1.2
2 MagnaChip Semiconductor Ltd.
May. 2011. Version1.2
3 MagnaChip Semiconductor Ltd.
MDV1525 – Single N-Channel Trench MOSFET 30V
ID, Drain Current [A]
MDV1525 – Single N-Channel Trench MOSFET 30V
20 4.5V 3.5V
15 8.0V VGS = 10V
10
5
3.0V
0 0.0 0.5 1.0 1.5
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
2.0
1.8
VGS=10V ID=11.0A 1.6
1.4
1.2
1.0
0.8
0.6 -50
-25
0 25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with Temperature
DS(ON)R [mΩ ], Drain-Source On-Resistance
Drain-Source On-Resistance [mΩ]
15
12 VGS = 4.5V
9 VGS = 10V
6
3 5 10 15 20
ID, Drain Current [A]
Fig.2 On-Resistance Variation with Drain Current and Gate Voltage
24 ※ Notes :
20 ID = 11.0A
16
12
8 TA = 25℃ 4
0 2 4 6 8 10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with Gate to Source Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
ID, Drain Current [A]
16 ※ Notes : VDS = 5V
12
8 TA=25℃
4
0 01234
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
5
IDR, Reverse Drain Current [A]
※ Notes : VGS = 0V
101
100
TA=25℃
10-1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature
May. 2011. Version1.2
4 MagnaChip Semiconductor Ltd.
VGS, Gate-Source Voltage [V]
MDV1525 – Single N-Channel Trench MOSFET 30V
10 ※ Note : ID = 11A
8
6
4
2
0 0 3 6 9 12
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
15
Capacitance [pF]
1200 900
Ciss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
600
300 Coss Crss
※ Notes ;
1. VGS = 0 V 2. f = 1 MHz
0 0 5 10 15 20 25
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
30
ID, Drain Current [A]
Operation in This Area is Limited by R DS(on) 102
10 ms 100 ms 101 1s 10s DC
100
Single Pulse
10-1
TJ=Max rated TC=25℃
10-1 100 101
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
102
ID, Drain.