RB541SM-40

Schottky Barrier Diode RB541SM-40 Data Sheet lApplication Small current rectification lDimensions (Unit : mm) 0.8±0.05 (1) 0.12±0.05 lLand Size Figure (Unit : mm) 0.8 1.2±0.05 1.6±0.1 0.6 1.7 lFeatures 1) Ultra small mold type (EMD2) 2) High reliability 3) Super low VF lConstruction Silicon epitaxial planar type (2) 0.3±0.05 ROHM : EMD2 JEDEC : SOD-523 0.6±0.1 JEITA : SC-79 : Year, week and factory lTaping Dimensions (Unit : mm) EMD2 lStructure (1) Cathode (2) Anode 4.0±0.1 2.0±0.05 Φ1.55±0.05 0.2±0.05 2.40±0.05 1.25±00.06 0.6 3.50±0.05 1.75±0.1 8.0±0.1 1.25±00.06 0.35±0.03 0.90±0.03 4.0±0.1 2.0±0.05 Φ0.5±0.05 0.2 0.75±0.05 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 40 V Reverse voltage VR Direct reverse voltage Average forward rectified current Non-repetitive forward current surge peak Io IFSM Glass epoxy board mounted, 60Hz half sin wave, resistive load 60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle Operating junction temperature Tj - 40 200 1 125 V mA A °C Storage temperature Tstg - -55 to +125 °C lElectrical Characteristics (Tj= 25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage Reverse current VF IF=100mA - - 0.61 V IR VR=40V - - 100 mA www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/5 2015.09 - Rev.A RB541SM-40 lElectrical Characteristic Curves Data Sheet FORWARD CURRENT : IF(mA) 1000 100 Tj = 1...