Dual N-Ch 20V Fast Switching MOSFETs
QM2502W
Dual N-Ch 20V Fast Switching MOSFETs
General Description
Product Summery
The QM2502W is the highest performan...
Description
QM2502W
Dual N-Ch 20V Fast Switching MOSFETs
General Description
Product Summery
The QM2502W is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2502W meet the RoHS and Green Product requirement with full function reliability approved.
Features
BVDSS 20V
RDSON 22mΩ
ID 5.8A
Applications
z Power management in portable and battery operated products
z DC-DC Power System z Load Switch
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
Absolute Maximum Ratings
TSSOP8 Pin Configuration
G2 S2 S2 D2
G1 S1 S1 D1
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Rating 20 ±12 5.8 4.6 24 1.1
-55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Typ. -----
Max. 110 70
Unit ℃/W ℃/W
Rev A.03 D051611
1
QM2502W
Dual N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient
RDS(...
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