Dual N-Ch 20V Fast Switching MOSFETs
QM2502S
Dual N-Ch 20V Fast Switching MOSFETs
General Description
The QM2502S is the highest performance trench N-ch MOS...
Description
QM2502S
Dual N-Ch 20V Fast Switching MOSFETs
General Description
The QM2502S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2502S meet the RoHS and Green Product requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
Product Summery
BVDSS 20V
RDSON 18.5mΩ
ID 7A
Applications
z Power management in portable and battery operated products
z DC-DC Power System z Load Switch
SOP8 Pin Configuration
D1 D1 D2 D2
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
S1 G1S2 G2
Rating 20 ±12 7 5.6 35 1.5
-55 to 150 -55 to 150
Thermal Data
Symbol RθJA RθJA
Parameter Thermal Resistance Junction-ambient 1 (Steady State)
Thermal Resistance Junction-ambient 1 (t<10S)
Typ. -----
Max. 85 25
Units V V A A A W ℃ ℃
Unit ℃/W ℃/W
Rev A.02 D051611
1
QM2502S
Dual N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature ...
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