QM2502M9

QM2502M9 Dual N-Ch 20V Fast Switching MOSFETs General Description The QM2502M9 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2502M9 meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 20V RDSON 18.5mΩ ID 11A Applications z Power management in portable and battery operated products z DC-DC Power System z Load Switch PRPAK2X5 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJA Parameter Thermal Resistance Junction-ambient 1 (Steady State) Thermal Resistance Junction-ambient 1 (t<10S) Rating 20 ±12 11 8.8 42 3.57 2.3 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Typ. ----- Max. 75 35 Unit ℃/W ℃/W Rev A.02 051611 1 QM2502M9 Dual N-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage ...