N-Ch 20V Fast Switching MOSFETs
QM2416Y1
N-Ch 20V Fast Switching MOSFETs
General Description
The QM2416Y1 is the highest performance trench N-ch MOSFET...
Description
QM2416Y1
N-Ch 20V Fast Switching MOSFETs
General Description
The QM2416Y1 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2416Y1 meet the RoHS and Green Product requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
Product Summery
BVDSS 20V
RDSON 65mΩ
ID 1.8A
Applications
z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System z Load Switch
SOT323 (SC-70-3L ) Pin Configuration
D
Absolute Maximum Ratings
G
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
S
Rating 20 ±8 1.8 1.4 9 0.33
-55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Typ. -----
Max. 375 240
Unit ℃/W ℃/W
Rev A.01 D032111
1
QM2416Y1
N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temper...
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