Document
QM2404J
N-Ch 20V Fast Switching MOSFETs
General Description
The QM2404J is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2404J meet the RoHS and Green Product requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
Product Summery
BVDSS 20V
RDSON 28mΩ
ID 5.8A
Applications
z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System z Load Switch
SOT89 Pin Configuration
D
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
GD S
Rating 20 ±8 5.8 4.7 24 1.5
-55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Typ. -----
Max. 85 30
Unit ℃/W ℃/W
Rev A.03 D050911
1
QM2404J
N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th) △VGS(th)
IDSS
IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate Threshold Voltage VGS(th) Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=4.5V , ID=5A VGS=2.5V , ID=4A VGS=1.8V , ID=3A VGS=VDS , ID =250uA
VDS=16V , VGS=0V , TJ=25℃ VDS=16V , VGS=0V , TJ=55℃ VGS=±8V , VDS=0V VDS=5V , ID=5A VDS=0V , VGS=0V , f=1MHz
VDS=15V , VGS=4.5V , ID=5A
VDD=10V , VGS=10V , RG=3.3Ω ID=5A
VDS=15V , VGS=0V , f=1MHz
Min. 20 -------
0.3 ---------------------------------
Typ. ---
0.028 22 27 34 0.6
-3.21 ------28 1.4 14.8 1.44 2.8 3.2 40 40.8 9.2 952 90 79
Max. ----28 34 42 1 --1 5
±100 --2.8
20.7 2.0 3.9 6.4 80 82 18.4 1333 126 111
Unit V
V/℃
mΩ
V mV/℃
uA nA S Ω nC
ns
pF
Diode Characteristics
Symbol IS ISM VSD trr Qrr
Parameter Continuous Source Current1,4 Pulsed Source Current2,4 Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃
IF=5A , dI/dt=100A/µs , TJ=25℃
Min. -----------
Typ. ------8.9 2.9
Max. 5.8 24 1.2 -----
Unit A A V nS nC
Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data.