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QM2404J Dataheets PDF



Part Number QM2404J
Manufacturers UBIQ
Logo UBIQ
Description N-Ch 20V Fast Switching MOSFETs
Datasheet QM2404J DatasheetQM2404J Datasheet (PDF)

QM2404J N-Ch 20V Fast Switching MOSFETs General Description The QM2404J is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2404J meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Availab.

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QM2404J N-Ch 20V Fast Switching MOSFETs General Description The QM2404J is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2404J meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 20V RDSON 28mΩ ID 5.8A Applications z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch SOT89 Pin Configuration D Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 GD S Rating 20 ±8 5.8 4.7 24 1.5 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Typ. ----- Max. 85 30 Unit ℃/W ℃/W Rev A.03 D050911 1 QM2404J N-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) IDSS IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate Threshold Voltage VGS(th) Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=4.5V , ID=5A VGS=2.5V , ID=4A VGS=1.8V , ID=3A VGS=VDS , ID =250uA VDS=16V , VGS=0V , TJ=25℃ VDS=16V , VGS=0V , TJ=55℃ VGS=±8V , VDS=0V VDS=5V , ID=5A VDS=0V , VGS=0V , f=1MHz VDS=15V , VGS=4.5V , ID=5A VDD=10V , VGS=10V , RG=3.3Ω ID=5A VDS=15V , VGS=0V , f=1MHz Min. 20 ------- 0.3 --------------------------------- Typ. --- 0.028 22 27 34 0.6 -3.21 ------28 1.4 14.8 1.44 2.8 3.2 40 40.8 9.2 952 90 79 Max. ----28 34 42 1 --1 5 ±100 --2.8 20.7 2.0 3.9 6.4 80 82 18.4 1333 126 111 Unit V V/℃ mΩ V mV/℃ uA nA S Ω nC ns pF Diode Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current1,4 Pulsed Source Current2,4 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=5A , dI/dt=100A/µs , TJ=25℃ Min. ----------- Typ. ------8.9 2.9 Max. 5.8 24 1.2 ----- Unit A A V nS nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data.


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