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MPS2222A

CDIL

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS ...


CDIL

MPS2222A

File Download Download MPS2222A Datasheet


Description
Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS2222 MPS2222A TO-92 Plastic Package General Purpose Transistors ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL MPS2222 MPS2222A UNITS Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation@ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Tstg 30 60 5 600 625 5.0 1.5 12 -55 to +150 40 75 6 V V V mA mW mW/ºC W mW/ºC ºC THERMAL RESISTANCE Junction to ambient Junction to case Rth(j-a) Rth(j-c) 200 ºC/W 83.3 ºC/W Continental Device India Limited Data Sheet Page 1 of 5 NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS2222 MPS2222A TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION MPS2222 Collector Emitter Voltage BVCEO IC=10mA,IB=0 >30 Collector Base Voltage BVCBO IC=10µA,IE=0 >60 Emitter Base Voltage BVEBO IE=10µA, IC=0 >5 Collector Cut off Current Collector Cut off Current Emitter Cut off Current Base Cut off Current DC Current Gain ICEX VCE =60V, VBE=3.0V ICBO ICBO VCB=50V, IE = 0 ICBO VCB=60V, IE = 0 ICBO VCB=50V, IE = 0 Ta= 125ºC ICBO VCB=60V, IE = 0 Ta= 125ºC IEBO VBE=3V, IC = 0 IBL VCE=60V,VBE=3.0V <0.01 <10 hFE VCE=10V,IC=0.1mA >35 VCE=10V,IC=1mA >50 VCE=10V,...




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