Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
...
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL
TRANSISTORS
MPS2222 MPS2222A
TO-92 Plastic Package
General Purpose
Transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
MPS2222
MPS2222A UNITS
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation@ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range
VCEO VCBO VEBO
IC PD
PD
Tj, Tstg
30 60 5
600 625 5.0 1.5 12 -55 to +150
40 75 6
V V V mA mW mW/ºC W mW/ºC ºC
THERMAL RESISTANCE Junction to ambient Junction to case
Rth(j-a) Rth(j-c)
200 ºC/W 83.3 ºC/W
Continental Device India Limited
Data Sheet
Page 1 of 5
NPN SILICON PLANAR EPITAXIAL
TRANSISTORS
MPS2222 MPS2222A
TO-92 Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MPS2222
Collector Emitter Voltage
BVCEO IC=10mA,IB=0
>30
Collector Base Voltage
BVCBO IC=10µA,IE=0
>60
Emitter Base Voltage
BVEBO IE=10µA, IC=0
>5
Collector Cut off Current Collector Cut off Current
Emitter Cut off Current Base Cut off Current DC Current Gain
ICEX VCE =60V, VBE=3.0V ICBO ICBO VCB=50V, IE = 0 ICBO VCB=60V, IE = 0 ICBO VCB=50V, IE = 0
Ta= 125ºC ICBO VCB=60V, IE = 0
Ta= 125ºC IEBO VBE=3V, IC = 0 IBL VCE=60V,VBE=3.0V
<0.01 <10
hFE VCE=10V,IC=0.1mA
>35
VCE=10V,IC=1mA
>50
VCE=10V,...