BD907/909/911 BD908/910/912
COMPLEMENTARY SILICON POWER TRANSISTORS
n BD908, BD909, BD910, BD911 AND BD912 SGS-THOMSON...
BD907/909/911 BD908/910/912
COMPLEMENTARY SILICON POWER
TRANSISTORS
n BD908, BD909, BD910, BD911 AND BD912 SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION The BD707, BD709, and BD711 are silicon epitaxial-base
NPN power
transistors in Jedec TO-220 plastic package, intented for use in power linear and switching applications. The complementary
PNP types are BD908, BD910, and BD912 respectively.
3 2 1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
P ara me t er
VCBO Collect or-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emit ter-Base Volt age (IC = 0) IE,IC Collect or Current
IB Base Current Ptot T otal Dissipation at Tc ≤ 25 oC Ts tg Storage T emperature Tj Max. Operating Junction T emperature
For
PNP types voltage and current values are negative.
October 1995
NPN PNP
BD907 BD908
60 60
V alu e BD909 BD910
80 80 5 15 5 90 -65 to 150 150
BD911 BD912
100 100
Unit
V V V A A W oC oC
1/4
BD907/BD908/BD909/BD910/BD911/BD912
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max
1. 67
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol ICBO
Parameter
Collector Cut-off Current (IE = 0)
ICEO
Collector Cut-off Current (IB = 0)
IEBO
Emitter Cut- off Current (IC = 0)
VCEO(sus)∗ Collector-Emitt er Sustaining Voltage (IB = 0)
VCE(sat)∗ Collector-Emitt er Saturation Voltage
VBE(sat)∗ Base-Emitter Saturation Voltage
VBE∗ Base-Emitter Voltage
hFE∗ DC Current Gain
T est Con ditio ns
for BD...
