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K2885

Hitachi Semiconductor
Part Number K2885
Manufacturer Hitachi Semiconductor
Description 2SK2885
Published Dec 7, 2015
Detailed Description 2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10mΩ...
Datasheet PDF File K2885 PDF File

K2885
K2885

Overview
2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10mΩ typ.
• 4V gate drive devices.
• High speed switching Outline LDPAK D G S ADE-208-545 A 2nd.
Edition 44 1 2 3 1 2 3 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 30 ±20 45 180 45 75 150 –55 to +150 Unit V V A A ...


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