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C5703 Dataheets PDF



Part Number C5703
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SC5703
Datasheet C5703 DatasheetC5703 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5703 Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 55 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage .

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TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5703 Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 55 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation DC t = 10 s Junction temperature Storage temperature range VCBO 100 V VCEX 80 V VCEO 50 V VEBO 7 V IC 4 A ICP 7 IB 400 mA PC 800 mW (Note 1) 1250 Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-3S1C Weight: 0.01 g (typ.) Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2000-05 1 2016-09-27 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf VCB = 100 V, IE = 0 A VEB = 7 V, IC = 0 A IC = 10 mA, IB = 0 A VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.6 A IC = 1.6 A, IB = 32 mA IC = 1.6 A, IB = 32 mA VCB = 10 V, IE = 0 A, f = 1 MHz See Figure 1 circuit diagram. VCC ∼− 30 V, RL = 19 Ω IB1 = −IB2 = 53.3 mA 2SC5703 Min Typ. Max Unit ― ― 100 nA ― ― 100 nA 50 ― ― V 400 ― 1000 ― 200 ― ― ― ― 0.12 V ― ― 1.10 V ― 26 ― pF ― 45 ― ― 700 ― ns ― 55 ― 20 μs IB1 IB1 Input IB2 IB2 Duty cycle < 1% RL VCC Output Figure 1 Switching Time Test Circuit & Timing Chart Marking Part No. (or abbreviation code) WA Lot code (year) Dot: even year No dot: odd year Lot code (month) 2 2016-09-27 Collector current IC (A) IC – VCE 5 Common emitter Ta = 25°C Single nonrepetitive pulse 50 40 4 60 30 20 3 10 2 5 2 1 IB = 1 mA 0 0 0.2 0.4 0.6 Collector-emitter voltage VCE (V) VCE (sat) – IC 1 Common emitter IC/IB = 50 Single nonrepetitive pulse 0.1 0.01 Ta = 100°C −55 25 0.001 0.001 0.01 0.1 1 10 Co.


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