Document
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5703
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SC5703
Unit: mm
• High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 55 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
DC t = 10 s
Junction temperature
Storage temperature range
VCBO
100
V
VCEX
80
V
VCEO
50
V
VEBO
7
V
IC
4
A
ICP
7
IB
400
mA
PC
800
mW
(Note 1)
1250
Tj
150
°C
Tstg
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3S1C
Weight: 0.01 g (typ.)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of commercial production
2000-05
1
2016-09-27
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob
tr tstg tf
VCB = 100 V, IE = 0 A VEB = 7 V, IC = 0 A IC = 10 mA, IB = 0 A VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.6 A IC = 1.6 A, IB = 32 mA IC = 1.6 A, IB = 32 mA VCB = 10 V, IE = 0 A, f = 1 MHz See Figure 1 circuit diagram. VCC ∼− 30 V, RL = 19 Ω IB1 = −IB2 = 53.3 mA
2SC5703
Min Typ. Max Unit
―
―
100
nA
―
―
100
nA
50
―
―
V
400
― 1000
―
200
―
―
―
―
0.12
V
―
―
1.10
V
―
26
―
pF
―
45
―
―
700
―
ns
―
55
―
20 μs
IB1
IB1
Input
IB2
IB2
Duty cycle < 1%
RL
VCC Output
Figure 1 Switching Time Test Circuit & Timing Chart
Marking
Part No. (or abbreviation code)
WA
Lot code (year) Dot: even year No dot: odd year
Lot code (month)
2
2016-09-27
Collector current IC (A)
IC – VCE
5 Common emitter
Ta = 25°C
Single nonrepetitive
pulse
50 40
4
60
30
20 3
10
2 5
2 1
IB = 1 mA
0
0
0.2
0.4
0.6
Collector-emitter voltage VCE (V)
VCE (sat) – IC
1 Common emitter IC/IB = 50 Single nonrepetitive pulse
0.1
0.01
Ta = 100°C
−55 25
0.001
0.001
0.01
0.1
1
10
Co.