DTM4606

N- and P-Channel 30 V (D-S) MOSFET DTM4606 www.din-tek.jp PRODUCT SUMMARY N-Channel P-Channel VDS (V) 30 - 30 RDS(on) (Ω) 0.024 at V GS = 10 V 0.036 at V GS = 4.5 V 0.048 at VGS = - 10 V 0.058 at VGS = - 4.5 V ID (A)a Qg (Typ.) 6.7 5.3 6.2 - 6.0 - 5.0 11.8 SO-8 FEATURES Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested APPLICATIONS Backlight Inverter for LCD Display Full Bridge Converter D1 S2 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 G1 G2 Top View S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS ± 20 TC = 25 °C 6.7 - 6.0 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 5.4 5.6b, c - 4.7 - 4.7b, c TA = 70 °C 4.4b, c - 3.7b, c Pulsed Drain Current IDM 20 - 20 Source-Drain Current Diode Current TC = 25 °C TA = 25 °C IS 2.5 1.6b, c - 2.5 - 1.6b, c Pulsed Source-Drain Current ISM 20 - 20 Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0 1 mH IAS EAS 7 2.45 - 10 5 TC = 25 °C 3.0 3.1 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 1.9 2.0b, c 2 2.0b, c TA = 70 °C 1.25b, c 1.25b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t ≤ 10 s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. ...