2SC3863

SMD Type Transistors NPN Transistors 2SC3863 ■ Features ● Collector Current Capability IC=100mA ● Collector Emitter Voltage VCEO=50V ● Complementary to 2SA1502 +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.21.1 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg Rating 50 50 6 100 200 200 150 -55 to 150 ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Collector-emitter cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Input off voltage Input on voltage Input resistance Input resistance ratio Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= 100 μA， IE= 0 VCEO Ic= 1 mA， IB= 0 VEBO IE= 100μA， IC= 0 ICBO VCB= 40V , IE= 0 ICEO VCE= 40V , IB= 0 IEBO VEB= 2V , IC=0 VCE(sat) IC=10mA, IB=0.5mA hFE VCE= 5V, IC=10mA VI(off) VCE= 5V, IC= 100uA VI(on) VCE= 0.2V, IC= 10mA R1 R1/R2 Cob VCB= 10V, f=10MHz fT VCE= 10V, IC=5mA Unit V mA mW ℃ 0-0.1 +0.10.68 -0.1 1. Base 2. Emitter 3. Collector Min Typ Max Unit 50 50 V 6 0.1 0.5 ...