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KRC113 Dataheets PDF



Part Number KRC113
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet KRC113 DatasheetKRC113 Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. EQUIVALENT CIRCUIT C R1 B E L M C KRC110~KRC114 EPITAXIAL PLANAR NPN TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE T.

  KRC113   KRC113



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SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. EQUIVALENT CIRCUIT C R1 B E L M C KRC110~KRC114 EPITAXIAL PLANAR NPN TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 50 50 5 100 625 150 -55 150 UNIT V V V mA mW 2009. 2. 25 Revision No : 0 1/4 KRC110~KRC114 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRC110 ICBO IEBO hFE VCE(sat) fT * Rise Time KRC111 KRC112 KRC113 tr KRC114 KRC110 Switching Time Storage Time KRC111 KRC112 KRC113 tstg KRC114 KRC110 Fall Time KRC111 KRC112 KRC113 tf KRC114 KRC110 KRC111 Input Resistor KRC112 KRC113 KRC114 Note : * Characteristic of Transistor Only. R1 TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VO=5V VIN=5V RL=1k - MIN. - 120 - 3.29 7 70 15.4 32.9 TYP. 0.1 250 0.025 0.03 0.3 0.06 0.11 3.0 2.0 6.0 4.0 5.0 0.2 0.12 2.0 0.9 1.4 4.7 10 100 22 47 MAX. 100 100 0.3 6.11 13 130 28.6 61.1 UNIT nA nA V MHz S k 2009. 2. 25 Revision No : 0 2/4 DC CURRENT GAIN hFE KRC110~KRC114 KRC110 2k 1k 500 300 100 50 30 10 0.1 0.3 h FE - I C Ta=100 C Ta=25 C Ta=-25 C VCE =5V 1 3 10 30 100 COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) KRC110 2 1 IC /IB=20 0.5 0.3 VCE(sat) - I C 0.1 0.05 0.03 0.01 0.1 Ta=100 C Ta=25 C Ta=-25 C 0.3 1 3 10 30 COLLECTOR CURRENT IC (mA) 100 DC CURRENT GAIN hFE KRC111 2k 1k 500 300 100 50 30 10 0.1 0.3 h FE - I C Ta=100 C Ta=25 C Ta=-25 C VCE =5V 1 3 10 30 100 COLLECTOR CURRENT IC (mA) DC CURRENT GAIN h FE KRC112 2k 1k 500 300 h FE - I C Ta=100 C 100 50 30 10 0.1 Ta=25 C Ta=-25 C VCE =5V 0.3 1 3 10 30 COLLECTOR CURRENT I C (mA) 100 2009. 2. 25 Revision No : 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) KRC111 2 IC /IB=20 1 0.5 0.3 VCE(sat) - I C 0.1 0.05 0.03 0.01 0.1 Ta=100 C Ta=25 C Ta=-25 C 0.3 1 3 10 30 COLLECTOR CURRENT IC (mA) 100 KRC112 2 I C/I B=20 1 0.5 0.3 VCE(sat) - I C 0.1 0.05 0.03 0.01 0.1 Ta=100 C Ta=25 C Ta=-25 C 0.3 1 3 10 30 COLLECTOR CURRENT IC (mA) 100 3/4 DC CURRENT GAIN h FE KRC110~KRC114 KRC113 2k 1k 500 300 h FE - I C Ta=100 C 100 50 30 10 0.1 Ta=25 C Ta=-25 C VCE =5V 0.3 1 3 10 30 COLLECTOR CURRENT I C (mA) 100 COLLECTOR-EMITTER S.


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