Document
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT C
R1 B
E
L M
C
KRC110~KRC114
EPITAXIAL PLANAR NPN TRANSISTOR
BC
JA
KE G
D
H FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg
RATING 50 50 5 100 625 150
-55 150
UNIT V V V mA mW
2009. 2. 25
Revision No : 0
1/4
KRC110~KRC114
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency
KRC110
ICBO IEBO hFE VCE(sat) fT *
Rise Time
KRC111 KRC112 KRC113
tr
KRC114
KRC110
Switching Time
Storage Time
KRC111 KRC112 KRC113
tstg
KRC114
KRC110
Fall Time
KRC111 KRC112 KRC113
tf
KRC114
KRC110
KRC111
Input Resistor
KRC112
KRC113
KRC114
Note : * Characteristic of Transistor Only.
R1
TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA
VO=5V VIN=5V RL=1k
-
MIN. -
120 -
3.29 7 70
15.4 32.9
TYP. 0.1
250 0.025 0.03 0.3 0.06 0.11 3.0 2.0 6.0 4.0 5.0 0.2 0.12 2.0 0.9 1.4 4.7
10 100 22 47
MAX. 100 100 0.3 6.11 13 130 28.6 61.1
UNIT nA nA V MHz
S
k
2009. 2. 25
Revision No : 0
2/4
DC CURRENT GAIN hFE
KRC110~KRC114
KRC110 2k
1k
500 300
100
50 30
10 0.1
0.3
h FE - I C
Ta=100 C
Ta=25 C Ta=-25 C
VCE =5V
1
3 10
30 100
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
KRC110 2 1 IC /IB=20
0.5 0.3
VCE(sat) - I C
0.1 0.05 0.03
0.01 0.1
Ta=100 C
Ta=25 C Ta=-25 C
0.3 1
3 10 30
COLLECTOR CURRENT IC (mA)
100
DC CURRENT GAIN hFE
KRC111 2k
1k
500 300
100
50 30
10 0.1
0.3
h FE - I C
Ta=100 C
Ta=25 C Ta=-25 C
VCE =5V
1
3 10
30 100
COLLECTOR CURRENT IC (mA)
DC CURRENT GAIN h FE
KRC112 2k
1k
500 300
h FE - I C
Ta=100 C
100 50 30
10 0.1
Ta=25 C Ta=-25 C
VCE =5V
0.3 1
3 10 30
COLLECTOR CURRENT I C (mA)
100
2009. 2. 25
Revision No : 0
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
KRC111 2
IC /IB=20 1
0.5 0.3
VCE(sat) - I C
0.1 0.05 0.03
0.01 0.1
Ta=100 C
Ta=25 C Ta=-25 C
0.3 1
3 10 30
COLLECTOR CURRENT IC (mA)
100
KRC112 2
I C/I B=20 1
0.5 0.3
VCE(sat) - I C
0.1 0.05 0.03
0.01 0.1
Ta=100 C Ta=25 C
Ta=-25 C 0.3 1
3
10
30
COLLECTOR CURRENT IC (mA)
100
3/4
DC CURRENT GAIN h FE
KRC110~KRC114
KRC113 2k
1k
500 300
h FE - I C
Ta=100 C
100 50 30
10 0.1
Ta=25 C Ta=-25 C
VCE =5V
0.3 1
3 10 30
COLLECTOR CURRENT I C (mA)
100
COLLECTOR-EMITTER S.