1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010 1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010
FEATURES
• 5.0V operation for read/write/erase operations
•...
Description
EN29F010 1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010
FEATURES
5.0V operation for read/write/erase operations
Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns
Sector Architecture: - 8 uniform sectors of 16Kbytes each - Supports full chip erase - Individual sector erase supported - Sector protection:
Hardware locking of sectors to prevent program or erase operations within individual sectors
High performance program/erase speed - Byte program time: 7µs typical - Sector erase time: 300ms typical - Chip erase time: 3s typical
Low Standby Current - 1µA CMOS standby current-typical - 1mA TTL standby current
Low Power Active Current - 12mA typical active read current - 30mA program/erase current
JEDEC Standard program and erase commands
JEDEC standard DATA polling and toggle bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode
0.23 µm triple-metal double-poly triple-well CMOS Flash Technology
Low Vcc write inhibit < 3.2V
100K endurance cycle
Package Options
- 32-pin PDIP
- 32-pin PLCC
- 32-pin 8mm x 20mm TSOP (Type 1)
- 32-pin 8mm x 14mm TSOP (Type 1)
Commercial and Industrial Temperature Ranges
GENERAL DESCRIPTION
The EN29F010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 128K bytes with 8 bits per byte, the 1M of memory is arranged in eight uniform sectors...
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