MBRD10150CT

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Diodes MBRD10150CT SCHOTTKY BARRIER RECTIFIER TO-252-2L FEATURES z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency 1. ANODE 2. CATHODE 3. ANODE z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM Peak repetitive reverse voltage VRWM VR VR(RMS) BDTICIO Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current @Tc=155℃ Non-Repetitive peak forward surge current Value 150 105 10 Unit V V A IFSM 8.3ms half sine wave 120 A PD Power dissipati 1.25 W RΘJA Tj Thermal resistance from junction to ambient Junction temperature 80 ℃/W 125 ℃ Tstg Storage temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V(BR) IR=100μA 150 V Reverse current IR VR=150V 100 μA Forward voltage VF1 VF2* IF=5A IF=10A 1V 1V Typical total capacitance Ctot VR=5V,f=1MHz 70 pF *Pulse test www.BDTIC.com/jcst Typical Characteristics MBRD10150CT Forward Characteristics 10000 Reverse Characteristics 1000 REVERSE CURRENT I (uA) R FORWARD CURRENT I (mA) F 1000 T =100℃ a 100 T =100℃ a 10 ...