SOT-23-3 Plastic-Encapsulate Transistors
2302 MOSFET(N-Channel)
FEATURES TrenchFET Power MOSFET
MARKING:A2SHB
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VDS Drain-Source voltage
20 V
VGS Gate-Source voltage
±10
V
ID Drain current
-2.9 A
PD Power Dissipation
1W
Tj Junction Temperature
150 ℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified)
Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Trans conductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage Diode Forward Current
Symbol V(BR)DSS Vth(GS)
IGSS IDSS
rDS(ON)
gfs
Ciss Coss Crss
td.