DatasheetsPDF.com

BZT55C47 Dataheets PDF



Part Number BZT55C47
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description 0.5 Watts Hermetically Sealed Glass Zener Voltage Regulators
Datasheet BZT55C47 DatasheetBZT55C47 Datasheet (PDF)

Pb RoHS COMPLIANCE BZT55C SERIES 0.5 Watts Hermetically Sealed Glass Zener Voltage Regulators QUADRO MINI-MELF Features — Zener voltage range 2.0 to 75 volts — Mini-MELF package — Surface device type mounting — Hermetically sealed glass — Compression Bonded Construction — All external surfaces are corrosion resistant and terminals are readily solderable — RoHS compliant — Matte Tin(Sn) lead finish — Blue color band indicates negative polarity Dimensions in inches and (millimeters) Maximum Ra.

  BZT55C47   BZT55C47


Document
Pb RoHS COMPLIANCE BZT55C SERIES 0.5 Watts Hermetically Sealed Glass Zener Voltage Regulators QUADRO MINI-MELF Features — Zener voltage range 2.0 to 75 volts — Mini-MELF package — Surface device type mounting — Hermetically sealed glass — Compression Bonded Construction — All external surfaces are corrosion resistant and terminals are readily solderable — RoHS compliant — Matte Tin(Sn) lead finish — Blue color band indicates negative polarity Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Type Number Symbol Value Power Dissipation Operating and Storage Temperature Range PD TJ, TSTG 500 -65 to + 200 Notes: These ratings are limiting values above which the serviceability of the diode may be impaired Units mW oC Version: B07 RATINGS AND CHARACTERISTIC CURVES (BZT55C SERIES) TKVZ - Temperature Coefficient of VZ (10-4/K) Ptot - Total Power Dissipation (mW) 600 500 400 300 200 100 0 0 40 80 120 160 200 Tamb - Ambient Temperature (°C) Figure 1. Total Power Dissipation vs. Ambient Temperature 1000 Tj = 25 °C 100 IZ = 5 mA 10 VZ - Voltage Change (mV) 1 0 5 10 15 20 25 V - Z-Voltage (V) Z Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C VZtn - Relative Voltage Change 1.3 VZtn = VZt/VZ (25 °C) 1.2 TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 1.1 4 x 10-4/K 2 x 10-4/K 1.0 0 - 2 x 10-4/K 0.9 - 4 x 10-4/K 0.8 - 60 0 60 120 180 240 Tj - Junction Temperature (°C) Figure 3. Typical Change of Working Voltage vs. Junction Temperature 15 10 5 IZ = 5 mA 0 -5 0 10 20 30 40 50 VZ - Z-Voltage (V) Figure 4. Temperature Coefficient of Vz vs. Z-Voltage CD - Diode Capacitance (pF) 200 150 VR = 2 V 100 Tj = 25 °C 50 0 0 5 10 15 20 25 VZ - Z-Voltage (V) Figure 5. Diode Capacitance vs. Z-Voltage IF - Forward Current (mA) 100 10 Tj = 25 °C 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Figure 6. Forward Current vs. Forward Voltage Version: B07 RATINGS AND CHARACTERISTIC CURVES (BZT55C SERIES) 100 1000 rZ - Differential Z-Resistance (Ω) IZ - Z-Current (mA) 80 Ptot = 500 mW Tamb = 25 °C 60 40 20 0 0 4 6 8 12 VZ - Z-Voltage (V) Figure 7. Z-Current vs. Z-Voltage 20 IZ = 1 mA 100 5 mA 10 10 mA 1 Tj = 25 °C 0 5 10 15 20 25 VZ - Z-Voltage (V) Figure 9. Differential Z-Resistance vs. Z-Voltage IZ - Z-Current (mA) 50 40 Ptot = 500 mW T = 25 °C amb 30 20 10 0 15 20 25 30 VZ - Z-Voltage (V) Figure 8. Z-Current vs. Z-Voltage 35 Zthp - Thermal Resistance for Pulse Cond. (KW) 1000 tP/T = 0.5 100 tP/T = 0.2 10 tP/T = 0.1 tP/T = 0.01 tP/T = 0.02 tP/T = 0.05 1 10-1 100 Single Pulse RthJA = 300 K/W T=T -T jmax amb iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 101 102 tP - Pulse Length (ms) Figure 10. Thermal Response Version: B07 ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted) VZ @ IZT Type (Volts) ZZT @ IZT Number VZ VZ IZT Ohms IZK ZZK @ IZK Min (V) Max (V) mA Max mA Ohms BZT55C2V0 1.88 2.11 5 100 1.0 600 BZT55C2V2 2.08 2.33 5 100 1.0 600 BZT55C2V4 2.28 2.56 5 85 1.0 600 BZT55C2V7 2.51 2.89 5 85 1.0 600 BZT55C3V0 2.8 3.2 5 85 1.0 600 BZT55C3V3 3.1 3.5 5 85 1.0 600 BZT55C3V6 3.4 3.8 5 85 1.0 600 BZT55C3V9 3.7 4.1 5 85 1.0 600 BZT55C4V3 4.0 4.6 5 75 1.0 600 BZT55C4V7 4.4 5.0 5 60 1.0 600 BZT55C5V1 4.8 5.4 5 35 1.0 550 BZT55C5V6 5.2 6.0 5 25 1.0 450 BZT55C6V2 5.8 6.6 5 10 1.0 200 BZT55C6V8 6.4 7.2 5 8 1.0 150 BZT55C7V5 7.0 7.9 5 7 1.0 50 BZT55C8V2 7.7 8.7 5 7 1.0 50 BZT55C9V1 8.5 9.6 5 10 1.0 50 BZT55C10 9.4 10.6 5 15 1.0 70 BZT55C11 10.4 11.6 5 20 1.0 70 BZT55C12 11.4 12.7 5 20 1.0 90 BZT55C13 12.4 14.1 5 26 1.0 110 BZT55C15 13.8 15.6 5 30 1.0 110 BZT55C16 15.3 17.1 5 40 1.0 170 BZT55C18 16.8 19.1 5 50 1.0 170 BZT55C20 18.8 21.1 5 55 1.0 220 BZT55C22 20.8 23.3 5 55 1.0 220 BZT55C24 22.8 25.6 5 80 1.0 220 BZT55C27 25.1 28.9 2 80 1.0 220 BZT55C30 28 32 2 80 1.0 220 BZT55C33 31 35 2 80 1.0 220 BZT55C36 34 38 2 80 1.0 220 BZT55C39 37 41 2 90 0.5 500 BZT55C43 40 46 2 90 0.5 600 BZT55C47 44 50 2 110 0.5 700 BZT55C51 48 54 2 125 0.5 700 BZT55C56 52 60 2 135 0.5 1000 BZT55C62 58 66 2.5 150 0.5 1000 BZT55C68 64 72 2.5 160 0.5 1000 BZT55C75 70 80 2.5 170 0.5 1000 VF Forward Voltage = 1.0v Maximum @ IF=100mA for all types. IR @ VR uA Max 50 50 50 10 4 2 2 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VR V 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.0 5.0 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 28 32 35 38 42 47 51 56 Notes: 1. The type numbers listed have zener voltage min/max limits as shown. 2. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an ra.


BZT55C43 BZT55C47 BZT55C51


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)