Document
BC857C
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
FEATURES
* Power dissipation
PCM :
0.225
W (Tamb=25OC) Note1
* Collector current
ICM :
-0.1 A
* Collector-base voltage
V(BR)CBO : -50
V
* Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Collector - base breakdown voltage (IC= -10mA, IE=0)
V(BR)CBO
Collector - emitter breakdown voltage (IC= -10mA, IB=0) Emitter - base breakdown voltage (IE= -10mA, IC=0) Collector cut - off current (VCB= -45V, IE=0)
V(BR)CEO V(BR)EBO
ICBO
Collector cut - off current (VCE= -40V, IB=0) Emitter cut - off current (VEB= -5V, IC=0)
ICEO IEBO
DC current gain (VCE= -5V, IC= -2mA) Collector - emitter saturation voltage (IC= -10mA, IB= -5mA) Base - emitter saturation voltage (IC= -100mA, IB= -10mA)
hFE(1) VCE(sat) VBE(sat)
Transition frequency (VCE= -5V, IC= -10mA, f= 100MHZ)
DEVICE MARKING BC857C
Notes: 1. Transistor mounted on an FR4 Printed-circuit board. 2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
fT
SOT-23
COLLECTOR 3
BASE 1
2 EMITTER
0.006(0.15) 0.003(0.08)
0.055(1.40) 0.047(1.20)
0.020(0.50) 0.012(0.30)
0.043(1.10) 0.035(0.90)
0.004(0.10) 0.000(0.00)
0.020(0.50) 0.012(0.30)
0.100(2.55) 0.089(2.25)
0.019(2.00) 0.071(1.80)
1
3
2
0.118(3.00) 0.110(2.80)
Dimensions in inches and (millimeters)
MIN -50 -45 -5
420 100
3G
MAX -
-0.1 -0.1 -0.1 800 -0.5 -1.1
-
UNITS V V V mA mA mA V V
MHZ
2007-3
DISCLAIMER NOTICE
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