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BC817-16 Dataheets PDF



Part Number BC817-16
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description NPN Small Signal Transistor
Datasheet BC817-16 DatasheetBC817-16 Datasheet (PDF)

BC817-16/-25/-40 Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES ● Low power loss, high efficiency ● Ideal for automated placement ● High surge current capability ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● Lighting application ● On-board DC/DC converter MECHANICAL DATA ● Case: SOT-23 ● Molding compound meets UL 94 V-0 flammability rating ●.

  BC817-16   BC817-16


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BC817-16/-25/-40 Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES ● Low power loss, high efficiency ● Ideal for automated placement ● High surge current capability ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● Lighting application ● On-board DC/DC converter MECHANICAL DATA ● Case: SOT-23 ● Molding compound meets UL 94 V-0 flammability rating ● Moisture sensitivity level: level 1, per J-STD-020 ● Packing code with suffix "G" means green compound (halogen-free) ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Weight: 8mg (approximately) KEY PARAMETERS PARAMETER VALUE UNIT VCBO VCEO VEBO IC hFE Package 50 V 45 V 5 V 500 mA 250-600 SOT-23 Configuration Single Dice ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER BC817- BC817- BC817- SYMBOL UNIT 16 25 40 Marking code on the device 6A 6B 6C Power dissipation Collector-base voltage, emitter open IC = 10 μA, IE = 0 PD VCBO 300 mW 50 V Collector-emitter voltage, base open IC = 10 mA, IB = 0 VCEO 45 V Emitter-base voltage, collector open IE = 1 μA, IC = 0 VEBO 5 V Collector current, dc IC 500 mA Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version:J1702 BC817-16/-25/-40 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN Collector cutoff current, emitter open Emitter cutoff current, collector open VCB = 45 V, IE = 0 VEB = 4 V, IC = 0 ICBO - IEBO - DC current gain BC817-16 100 VCE = 1 V, IC = 100 mA BC817-25 hFE 160 BC817-40 250 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCE = 5 V , IC = 10 mA, f= 100MHz VCE(sat) VBE(sat) fT 100 TYP - - - - MAX UNIT 0.1 µA 0.1 µA 250 400 600 0.7 V 1.2 V - MHz ORDERING INFORMATION PART NO. PACKING CODE BC817-XX RF (Note 1) Notes: 1. "xx" is Device Code is"16" and "25" and "40" *: optional available PACKING CODE SUFFIX(*) G PACKAGE SOT-23 PACKING 3K / 7" Reel EXAMPLE EXAMPLE P/N PART NO. BC817-16 RFG BC817-16 PACKING CODE RF PACKING CODE SUFFIX G DESCRIPTION Green compound 2 Version:J1702 CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Typical Pulsed Current Gain VS. Collector Current 10 IC , Collector Current (A) 1 0.1 0.01 0.001 0 VCE = 5 V 100 200 300 400 500 hFE IC , Collector Current (mA) BC817-16/-25/-40 Taiwan Semiconductor Fig. 2 Collector-Emitter Saturation Voltage VS. Collector Current 10.00 1.00 0.10 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VCE(sat) , Collector Emitter Voltage (V) -IC, Collector Current (mA) Fig.3 Base-Emitter Saturation Voltage VS. Collector Current 1000 Fig.4 Base-Emitter On Voltage VS. Collector Current 1 IC , Collector Current (A) 100 0.1 10 0.01 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VBE , Base-Emitter Voltage (V) 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VBE(sat) , Base-Emitter on Voltage (V) 3 Version:J1702 CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Collector-Base Capacitance VS. Collector-Base Voltage 40 Collector-Base Capacitance (pF) 30 20 10 0 0 4 8 12 16 20 24 28 VCB , Collector-Base Voltage (V) BC817-16/-25/-40 Taiwan Semiconductor 4 Version:J1702 PACKAGE OUTLINE DIMENSION SOT-23 BC817-16/-25/-40 Taiwan Semiconductor DIM. A B C D E F G H Unit(mm) Min Max 2.70 3.10 1.10 1.50 0.30 0.51 1.78 2.04 2.10 2.64 0.89 1.30 0.55 REF 0.10 REF Unit(inch) Min Max 0.106 0.122 0.043 0.059 0.012 0.020 0.070 0.080 0.083 0.104 0.035 0.051 0.022 REF 0.004 REF SUGGEST PAD LAYOUT DIM. Z X Y C E Unit(mm) TYP 2.8 0.7 0.9 1.9 1.0 Unit(inch) TYP 0.11 0.03 0.04 0.07 0.04 5 Version:J1702 BC817-16/-25/-40 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own ris.


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