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BC848 Dataheets PDF



Part Number BC848
Manufacturers NXP
Logo NXP
Description 100 mA NPN general-purpose transistors
Datasheet BC848 DatasheetBC848 Datasheet (PDF)

BC848 series 30 V, 100 mA NPN general-purpose transistors Rev. 07 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP BC848B SOT23 BC848W SOT323 JEITA SC-70 JEDEC TO-236AB - PNP complement BC858B BC858W 1.2 Features „ General-purpose transistors „ SMD plastic packages 1.3 Applications „ General-purpose switching and amp.

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BC848 series 30 V, 100 mA NPN general-purpose transistors Rev. 07 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP BC848B SOT23 BC848W SOT323 JEITA SC-70 JEDEC TO-236AB - PNP complement BC858B BC858W 1.2 Features „ General-purpose transistors „ SMD plastic packages 1.3 Applications „ General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain BC848B BC848W Conditions open base VCE = 5 V; IC = 2 mA Min Typ Max Unit - - 30 V - - 100 mA 200 290 450 110 - 800 NXP Semiconductors BC848 series 30 V, 100 mA NPN general-purpose transistors 2. Pinning information Table 3. Pin 1 2 3 Pinning Description base emitter collector Simplified outline Symbol 3 12 006aaa144 3 1 2 sym021 3. Ordering information Table 4. Ordering information Type number Package Name Description BC848B - plastic surface mounted package; 3 leads BC848W SC-70 plastic surface mounted package; 3 leads 4. Marking Table 5. Marking codes Type number BC848B BC848W [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking code[1] 1K* 1M* Version SOT23 SOT323 BC848_SER_7 Product data sheet Rev. 07 — 17 November 2009 © NXP B.V. 2009. All rights reserved. 2 of 12 NXP Semiconductors BC848 series 30 V, 100 mA NPN general-purpose transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min VCBO VCEO VEBO IC ICM IBM Ptot collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation SOT23 open emitter open base open collector single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25 °C - - [1] - SOT323 - Tj Tamb Tstg junction temperature ambient temperature storage temperature −65 −65 Max Unit 30 V 30 V 5V 100 mA 200 mA 200 mA 250 200 150 +150 +150 mW mW °C °C °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 7. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient SOT23 SOT323 Conditions in free air Min [1] - Typ Max - 500 - 625 [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Unit K/W K/W BC848_SER_7 Product data sheet Rev. 07 — 17 November 2009 © NXP B.V. 2009. All rights reserved. 3 of 12 NXP Semiconductors BC848 series 30 V, 100 mA NPN general-purpose transistors 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions ICBO IEBO collector-base cut-off current emitter-base cut-off current VCB = 30 V; IE = 0 A VCB = 30 V; IE = 0 A; Tj = 150 °C VEB = 5 V; IE = 0 A hFE DC current gain VCE = 5 V; IC = 10 μA VCE = 5 V; IC = 2 mA BC848B BC848W VCEsat VBEsat VBE fT collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage transition frequency IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V VCE = 5 V; IC = 10 mA; f = 100 MHz Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz NF noise figure VCE = 5 V; IC = 200 μA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz Min - - - 200 110 [1] [2] [2] [3] 580 [3] 100 - - [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [2] VBEsat decreases by approximately 1.7 mV/K with increasing temperature. [3] VBE decreases by approximately 2 mV/K with increasing temperature. Typ - - 150 290 90 200 700 900 660 - 2.5 2 Max 15 5 100 - 450 800 250 600 700 770 - 3 10 Unit nA μA nA mV mV mV mV mV mV MHz pF dB BC848_SER_7 Product data sheet Rev. 07 — 17 November 2009 © NXP B.V. 2009. All rights reserved. 4 of 12 NXP Semiconductors BC848 series 30 V, 100 mA NPN general-purpose transistors 600 hFE 500 400 300 200 100 mgt727 (1) (2) (3) 1200 VBE (mV) 1000 800 600 400 200 mgt728 (1) (2) (3) 0 10−1 1 10 102 103 IC (mA) VCE = 5 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 1. BC848B: DC current gain as a function of collector current; typical values 0 10−2 10−1 1 10 102 103 IC (mA) VCE = 5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig 2. BC848B: Base-emitter voltage as a function of collector current; typical values 104 VCEsat (mV) 103 102 (1) (3) (2) mgt729 1200 VBEsat (mV) 1000 800 600 400 200 (1) (2) (3) mgt730 10 10−1 1 10 102 103 IC (mA) IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. BC848B: Collector-emitter saturation voltage as a function of collector current; typical values 0 10−1 1 10 102 103 IC (mA) IC/IB .


BC848A BC848 BC848B


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