Document
BC848 series
30 V, 100 mA NPN general-purpose transistors
Rev. 07 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number
Package
NXP
BC848B
SOT23
BC848W
SOT323
JEITA SC-70
JEDEC TO-236AB -
PNP complement
BC858B BC858W
1.2 Features
General-purpose transistors SMD plastic packages
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2. Symbol VCEO IC hFE
Quick reference data Parameter collector-emitter voltage collector current DC current gain
BC848B BC848W
Conditions open base
VCE = 5 V; IC = 2 mA
Min Typ Max Unit - - 30 V - - 100 mA
200 290 450
110 -
800
NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
2. Pinning information
Table 3. Pin 1 2 3
Pinning Description base emitter collector
Simplified outline Symbol
3
12
006aaa144
3
1 2
sym021
3. Ordering information
Table 4. Ordering information
Type number Package
Name Description
BC848B - plastic surface mounted package; 3 leads
BC848W
SC-70 plastic surface mounted package; 3 leads
4. Marking
Table 5. Marking codes Type number BC848B BC848W
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
Marking code[1] 1K* 1M*
Version SOT23 SOT323
BC848_SER_7
Product data sheet
Rev. 07 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
2 of 12
NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VCBO VCEO VEBO IC ICM
IBM
Ptot
collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current
peak base current
total power dissipation SOT23
open emitter open base open collector
single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25 °C
-
-
[1]
-
SOT323
-
Tj Tamb Tstg
junction temperature ambient temperature storage temperature
−65 −65
Max Unit 30 V 30 V 5V 100 mA 200 mA
200 mA
250 200 150 +150 +150
mW mW °C °C °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
Table 7. Symbol Rth(j-a)
Thermal characteristics Parameter thermal resistance from junction to ambient SOT23 SOT323
Conditions in free air
Min
[1]
-
Typ Max
- 500 - 625
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W K/W
BC848_SER_7
Product data sheet
Rev. 07 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
3 of 12
NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
7. Characteristics
Table 8. Characteristics Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO IEBO
collector-base cut-off current
emitter-base cut-off current
VCB = 30 V; IE = 0 A
VCB = 30 V; IE = 0 A; Tj = 150 °C
VEB = 5 V; IE = 0 A
hFE DC current gain VCE = 5 V; IC = 10 μA VCE = 5 V; IC = 2 mA BC848B
BC848W
VCEsat VBEsat VBE fT
collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage
transition frequency
IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V VCE = 5 V; IC = 10 mA; f = 100 MHz
Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz
NF noise figure
VCE = 5 V; IC = 200 μA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz
Min -
-
-
200 110 [1] [2] [2] [3] 580 [3] 100
-
-
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [2] VBEsat decreases by approximately 1.7 mV/K with increasing temperature. [3] VBE decreases by approximately 2 mV/K with increasing temperature.
Typ -
-
150
290 90 200 700 900 660 -
2.5
2
Max 15 5
100
-
450 800 250 600 700 770 -
3
10
Unit nA μA nA
mV mV mV mV mV mV MHz pF dB
BC848_SER_7
Product data sheet
Rev. 07 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
4 of 12
NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
600 hFE
500
400
300
200
100
mgt727 (1) (2)
(3)
1200 VBE (mV)
1000
800
600
400
200
mgt728
(1) (2) (3)
0 10−1
1
10 102 103 IC (mA)
VCE = 5 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
Fig 1. BC848B: DC current gain as a function of collector current; typical values
0 10−2
10−1
1
10 102 103 IC (mA)
VCE = 5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C
Fig 2. BC848B: Base-emitter voltage as a function of collector current; typical values
104 VCEsat (mV)
103
102
(1) (3) (2)
mgt729
1200 VBEsat (mV)
1000
800
600
400
200
(1) (2)
(3)
mgt730
10 10−1
1
10 102 103 IC (mA)
IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
Fig 3.
BC848B: Collector-emitter saturation voltage as a function of collector current; typical values
0 10−1
1
10 102 103 IC (mA)
IC/IB .