DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BC847BS NPN general purpose double transistor
Product sp...
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BC847BS
NPN general purpose double
transistor
Product specification Supersedes the data of 1997 Jul 14
1999 Apr 28
Philips Semiconductors
NPN general purpose double
transistor
Product specification
BC847BS
FEATURES
Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the
transistors.
PINNING
PIN 1, 4 2, 5 6, 3
emitter base collector
DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2
APPLICATIONS General purpose switching and amplification.
DESCRIPTION
NPN double
transistor in an SC-88 plastic package.
PNP complement: BC857BS.
MARKING
TYPE NUMBER BC847BS
MARKING CODE 1Ft
handbook, halfpage
65
4
12 Top view
3
65 4
TR2 TR1
123
MAM340
Fig.1 Simplified outline (SC-88) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per
transistor
VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb
collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature
Per device
Ptot total power dissipation
open emitter open base open collector
Tamb ≤ 25 °C
Tamb ≤ 25 °C; note 1
Note 1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
− 50 V − 45 V −5V − 100 mA...