BC847BS

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC847BS NPN general purpose double transistor Product specification Supersedes the data of 1997 Jul 14 1999 Apr 28 Philips Semiconductors NPN general purpose double transistor Product specification BC847BS FEATURES Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors. PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 APPLICATIONS General purpose switching and amplification. DESCRIPTION NPN double transistor in an SC-88 plastic package. PNP complement: BC857BS. MARKING TYPE NUMBER BC847BS MARKING CODE 1Ft handbook, halfpage 65 4 12 Top view 3 65 4 TR2 TR1 123 MAM340 Fig.1 Simplified outline (SC-88) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS Per transistor VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Per device Ptot total power dissipation open emitter open base open collector Tamb ≤ 25 °C Tamb ≤ 25 °C; note 1 Note 1. Device mounted on an FR4 printed-circuit board. MIN. MAX. UNIT − 50 V − 45 V −5V − 100 mA...