BC848

NPN Silicon Planar Epitaxial Transistors BC846 BC847 BC848 Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 SOT-23 SMD Package Unit: inch (mm) Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) DESCRIPTION Collector Base Voltage Collector Emmitter Voltage (VBE = 0V) Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - Peak Total power dissipation up to Tamb = 25 oC Storge Temperature Junction Temperature SYMBOL VCBO VCES VCEO VEBO IC ICM -IEM IBM Ptot** Tstg Tj BC846 80 80 65 6 Thermal Resistance From junction to ambient Rth(j-a)** **Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm BC847 50 50 45 6 100 200 200 200 250 -55 to +150 150 500 BC848 30 30 30 5 UNITS V V V V mA mA mA mW oC oC K/W www.rectron.com 1 of 2 BC846 BC847 BC848 Electrical Characteristics (at Ta=25 oC unless otherwise specified) DESCRIPTION Collector Cut Off Current SYMBOL TEST CONDITION ICBO VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain VBE(on)* IC = 2mA, VCE = 5V IC = 10mA, VCE = 5V VCE(Sat) IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA VBE(Sat)*** IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA hFE IC = 10uA, VCE = 5V BC846A/BC847A/BC848A BC846B/BC847B/BC848B BC847C/BC848C MIN TYP MAX 15 4 0.58 0.7 0.77 0.25 0.60 0.7 0.9 UNITS nA uA V V V 90 150 270 IC = 2mA, VCE...