H9DP32A4JJBCGR

CI-MCP Specification 4GB eNAND Flash(x8) + 4Gb Mobile DDR (x32) This document is a general product description and is subject to change without notice. SK hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.1 / Nov. 2012 1 Preliminary H9DP32A4JJBCGR eNAND 4GB(x8) / Mobile DDR 4Gb(x32, 2CS) Document Title CI-MCP 4GB(x8) eNAND Flash / 4Gb (x32) Mobile DDR Revision History Revision No. History 0.1 - Initial Draft 0.2 - Updated DC and AC CHARACTERISTICS Draft Date Nov. 2012 Nov. 2012 Remark Preliminary Preliminary Rev 0.1 / Nov. 2012 2 Preliminary H9DP32A4JJBCGR eNAND 4GB(x8) / Mobile DDR 4Gb(x32, 2CS) FEATURES [ CI-MCP ] ● Operation Temperature - (-25)oC ~ 85oC ● Package - 153-ball FBGA - 11.5x13.0mm2, 1.0t, 0.5mm pitch - Lead & Halogen Free [ e-NAND ] [ DDR SDRAM ] ● Packaged NAND flash memory with MultiMediaCard interface ● e-NAND system specification, compliant with V4.41 ● Full backward compatibility with previous eNAND system specification ● Bus mode - High-speed eMMC protocol. - Three different data bus widths: 1 bit, 4 bits,8 bits. - Data transfer rate: up to 104Mbyte/s - DDR mode supported ● Operating voltage range: - VCCQ = 3.3/1.8V - VCC = 3.3V ● Error free memory access - Internal error correction code - Internal enhanced data management algorithm (Wear levelling, Bad block management, Garbage collection) - Possibility for the host to make sudden power failure safe-update operations for data...