uPA2791GR

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2791GR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. FEATURES Low on-state resistance N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) P-channel RDS(on)1 = 82 mΩ MAX. (VGS = −10 V, ID = −3.0 A) RDS(on)2 = 110 mΩ MAX. (VGS = −4.5 V, ID = −3.0 A) Low gate charge N-channel QG = 10 nC TYP. (VGS = 10 V) P-channel QG = 8.3 nC TYP. (VGS = −10 V) Built-in gate protection diode Small and surface mount package (Power SOP8) 1.8 MAX. 1.44 0.05 MIN. PACKAGE DRAWING (Unit: mm) 85 N-channel 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 P-channel 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 14 5.37 MAX. 6.0 ± 0.3 4.4 0.8 +0.10 –0.05 0.15 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M 0.5 ± 0.2 0.10 ORDERING INFORMATION PART NUMBER μ PA2791GR-E1-AT Note μ PA2791GR-E2-AT Note LEAD PLATING Pure Sn PACKING Tape 2500 p/reel PACKAGE Power SOP8 Note Pb-free (This product does not contain Pb in the external electrode and other parts.) EQUIVALENT CIRCUIT N-channel Drain P-channel Drain Gate Body Diode Gate Body Diode Gate Protection Diode Source Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if ...