DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2560
Dual N-CHANNEL MOSFET FOR SWITCHING
DESCRIPTION The μ PA2560 is Dual N...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
μ PA2560
Dual N-CHANNEL MOSFET FOR SWITCHING
DESCRIPTION The μ PA2560 is Dual N-channel MOSFETs designed for Back light
inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to
contribute minimize the equipments.
FEATURES
4.5 V drive available Low on-state resistance
RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 2 A) RDS(on)2 = 83 mΩ MAX. (VGS = 4.5 V, ID = 2 A) Built-in gate protection diode Small and surface mount package (8-pin VSOF (2429))
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30 V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20 V
Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation (1 unit, 5 s) Note2 Total Power Dissipation (2 units, 5 s) Note2
ID(DC) ID(pulse) PT1 PT2
±4.5 A ±18 A 1.5 W 2.2 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg −55 to +150 °C
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mm.
PACKAGE DRAWING (Unit: mm)
2.9±0.1 0.65 8
5
A
0.17±0.05 0 to 0.025
2.8±0.1 2.4±0.1
1 0.32±0.05
4 0.05 M S A
0.8±0.05
S
(0.3)
1: Source1 2: Gate1 3: Source2 4: Gate2 5, 6: Drain2 7, 8: Drain1
EQUIVALENT CIRCUIT (1/2)
Drain
ORDERING INFORMATION
PART NUMBER μ PA2560T1H-T1-AT Note μ PA2560T1H-T2-AT Note
LEAD PLATING
PACKING
PACKAGE
Pure Sn
8 mm embossed taping 8-pin VSOF (2429)
3000 p/reel
Note Pb-free (This product does not c...