Power MOSFET
Applications
l Dual Common Drain Control MOSFETs for
Multiphase DC-DC Converters
Features
l Replaces Two discrete high s...
Description
Applications
l Dual Common Drain Control MOSFETs for
Multiphase DC-DC Converters
Features
l Replaces Two discrete high side MOSFETs l Optimized for High Frequency Switching l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Compatible with existing Surface Mount
Techniques l RoHS Compliant and Halogen Free
l 100% Rg tested
PD - 97540
IRF6702M2DTRPbF
IRF6702M2DTR1PbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 5.2mΩ@ 10V 8.6mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
9.4nC 3.3nC 1.2nC 17nC 6.3nC 1.8V
D D
G1 S1
G2 S2
Applicable DirectFET Outline and Substrate Outline
DirectFET ISOMETRIC
S1 S2 SB
M2 M4 MA L4 L6 L8
Description
The IRF6702M2DPbF combines two MOSFET switches optimized for high side applications into a single medium can DirectFET package. The switches have low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency multiphase DC-DC converters that power the latest generation of processors operating at higher frequencies.
The IRF6702M2DPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the highest power density for two MOSFETs in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing ...
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