SEMICONDUCTOR
TECHNICAL DATA
MBRF30100CT
SCHOTTKY BARRIER TYPE DIODE
SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTE...
SEMICONDUCTOR
TECHNICAL DATA
MBRF30100CT
SCHOTTKY BARRIER TYPE DIODE
SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION.
FEATURES Average Output Rectified Current : IO=30A. Repetitive Peak Reverse Voltage : VRRM=100V. Fast Reverse Recovery Time : trr=35ns.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Repetitive Peak Reverse Voltage
VRRM
100
Average Output Rectified Current (Note)
IO 30
Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz)
IFSM
350
Junction Temperature
Tj -40 150
Storage Temperature Range
Tstg -55 150
Note : average forward current of centertap full wave connection.
UNIT V A
A
K
A S
E
LL M
DD
NN
G B
J
F P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5 R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
Q
1. ANODE 2. CATHODE 3. ANODE
TO-220IS
2 13
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Forward Voltage Repetitive Peak Reverse Current
(Note) (Note)
VFM IRRM
Reverse Recovery Time
(Note)
trr
Thermal Resistance Note : A value of one cell
(Note)
Rth(j-c)
TEST CONDITION IFM=15A VRRM=Rated
IFM=1.0A, di/dt=-30A/ Juction to Case
MIN. -
TYP. -
MAX. 0.85
UNIT V
- - 150
- - 35 ns - - 2.5 /W
2007. 10. 30
Revision No : 1
1/2
MBRF30100CT
FORWARD CURRENT IF (A)
IF - VF
30
10
5.0 3.0
Tj =25 C
...