Silicon Diode
1S2076
Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator
ADE-208-145A (Z) Rev. 1 Aug. 1995 Fe...
Description
1S2076
Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator
ADE-208-145A (Z) Rev. 1 Aug. 1995 Features
Low capacitance. (C = 3.0pF max) Short reverse recovery time. (trr = 8.0ns max) High reliability with glass seal.
Ordering Information
Type No. 1S2076 Cathode band Light Blue Package Code DO-35
Outline
1 Cathode band
2
1. Cathode 2. Anode
1S2076
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR I FM I FSM * IO Pd Tj Tstg Value 35 30 450 1 150 250 175 –65 to +175 Unit V V mA A mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C t rr* Min 0.64 — — — Typ — — — — Max 0.80 0.1 3.0 8.0 Unit V µA pF ns Test Condition I F = 10mA VR = 30V VR = 1V, f = 1MHz I F = IR = 10mA, Irr = 1mA
Note: Reverse recovery time test circuit
DC Supply
0.1µF
3kΩ Sampling Rin = 50Ω Oscilloscope
Ro = 50Ω Pulse Generator
Trigger
2
1S2076
10
–1
Forward current I F (A)
10
–3
10
–4
0
0.2
0.8 0.4 0.6 1.0 Forward voltage VF (V)
Ta = 125 °C Ta = 75°C Ta = 25°C Ta = –25° C
10
–2
1.2
Fig.1 Forward current Vs. Forward voltage
–4
10
Ta = 125°C 10 Reverse current I R (A)
–5
Ta = 75°C 10
–6
10
–7
Ta = 25°C 10
–8
10
–9
0
30 10 20 40 Reverse voltag...
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