BAV70

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV70 High-speed double diode Product specification Supersedes data of 1997 Nov 24 1999 May 05 www.DataSheet4U.com www.DataSheet4U.com Philips Semiconductors High-speed double diode Product specification BAV70 FEATURES Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 70 V Repetitive peak reverse voltage: max. 75 V Repetitive peak forward current: max. 450 mA. APPLICATIONS High-speed switching in thick and thin-film circuits. DESCRIPTION The BAV70 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. PINNING PIN 1 2 3 DESCRIPTION anode (a1) anode (a2) common cathode handbook, halfpage 3 3 1 2 1 Top view 2 MAM383 Marking code: A4p = made in Hong Kong. A4t = made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS Per diode VRRM VR IF IFRM IFSM Ptot Tstg Tj repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature single diode loaded; note 1; see Fig.2 double diode loaded; note 1; see Fig.2 square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms...