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BAV19W, BAV20W, BAV21W
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 m tape), 15K/box
FEATURES
• Silicon epitaxial planar diodes
• For general purpose
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PARTS TABLE
PART
TYPE DIFFERENTIATION
BAV19W
VR = 100 V
BAV20W
VR = 150 V
BAV21W
VR = 200 V
ORDERING CODE
BAV19W-E3-08 or BAV19W-E3-18 BAV19W-HE3-08 or BAV19W-HE3-18
BAV20W-E3-08 or BAV20W-E3-18 BAV20W-HE3-08 or BAV20W-HE3-18
BAV21W-E3-08 or BAV21W-E3-18 BAV21W-HE3-08 or BAV21W-HE3-18
TYPE MARKING
A8
A9
AA
CIRCUIT CONFIGURATION
Single
REMARKS Tape and reel
Single
Tape and reel
Single
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Continuous reverse voltage
Repetitive peak reverse voltage
DC Forward current (1) Rectified current (average) half wave rectification with resist. load (1)
BAV19W BAV20W BAV21W BAV19W BAV20W BAV21W
VR VR VR VRRM VRRM VRRM IF
IF(AV)
Repetitive peak forward current (1)
f 50 Hz, = 180°
IFRM
Surge forward current
t < 1 s, Tj = 25 °C
IFSM
Power dissipation (1)
Ptot
VALUE 100 150 200 120 200 250 250
200
625 1
410
UNIT V V V V V V mA
mA
mA A mW
Rev. 1.6, 23-Feb-18
1
Document Number: 85725
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
BAV19W, BAV20W, BAV21W
Vishay Semiconductors
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1) Junction temperature (1) Storage temperature range (1)
RthJA Tj Tstg
Operating temperature range
Top
Note (1) Valid provided that leads are kept at ambient temperature
VALUE 375 150
-65 to +150 -55 to +150
UNIT °C/W
°C °C °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL
MIN.
TYP.
Forward voltage
IF = 100 mA
VF
IF = 200 mA
VF
VR = 100 V
BAV19W
IR
VR = 100 V, Tj = 100 °C BAV19W
IR
Leakage current
VR = 150 V
BAV20W
IR
VR = 150 V, Tj = 100 °C BAV20W
IR
VR = 200 V
BAV21W
IR
VR = 200 V, Tj = 100 °C BAV21W
IR
Dynamic forward resistance
IF = 10 mA
rf
5
Diode capacitance
VR = 0, f = 1 MHz
CD
1.5
Reverse recovery time
IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100
trr
MAX. 1
1.25 100 15 100 15 100 15
50
UNIT V V nA μA nA μA nA μA
pF
ns
I F - Forward Current (mA) IO , I F - Admissible Forward Current (A)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
0.3
100
Tj = 100 °C
0.2
10
25 °C
DC current IF
1
Current (rectif.) IO
0.1
0.1
0.01 0
18858
0.2
0.4
0.6
0.8
1
VF - Forward Voltage (V)
0 0
18859
30
60
90
120 150
Tamb - Ambient Temperature (°C)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
Rev. 1.6, 23-Feb-18
2
Document Number: 85725
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
BAV19W, BAV20W, BAV21W
Vishay Semiconductors
Ptot - Admissible Power Dissipation (mW)
500
400
300
200 100
0 0
18860
40
80
120 160 200
Tamb - Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
100
rf - Dynamic Forward Resistance (Ω)
10
1 1
18861
10
100
IF - Forward Current (mA)
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
100
1000
IR(Tj)/IR (25 °C) - Leakage Current
100
10
1
0.1 0
18862
Reverse Voltage BAV19W VR = 100 V BAV20W VR = 150 V BAV21W VR = 200 V
40 80 120 160 200 Tj - Junction Temperature (°C)
Fig. 5 - Leakage Current vs. Junction Temperature
CD - Diode Capacitance (pF)
2.0 1.8 1.6
1.4 1.2
1.0 0.8 0.6 0.4 0.2
0 0.1
18863
Tj = 25 ° C
1
10
100
VR - Reverse Voltage (V)
Fig. 6 - Capacitance vs. Reverse Voltage
10
IFSM (A)
1
TJ = 25 °C - Prior to Surge
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
tp - Test Pulse (s)
Fig. 7 - Non-Repetitive Peak Forward Current vs. Pulse Duration Maximum Admissible Values of Square Pulse
Rev. 1.6, 23-Feb-18
3
Document Number: 85725
For te.