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BAV21W Dataheets PDF



Part Number BAV21W
Manufacturers Vishay
Logo Vishay
Description Small Signal Switching Diodes
Datasheet BAV21W DatasheetBAV21W Datasheet (PDF)

www.vishay.com BAV19W, BAV20W, BAV21W Vishay Semiconductors Small Signal Switching Diodes, High Voltage DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 m tape), 15K/box FEATURES • Silicon epitaxial planar diodes • For general purpose • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-c.

  BAV21W   BAV21W


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www.vishay.com BAV19W, BAV20W, BAV21W Vishay Semiconductors Small Signal Switching Diodes, High Voltage DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 m tape), 15K/box FEATURES • Silicon epitaxial planar diodes • For general purpose • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912         PARTS TABLE PART TYPE DIFFERENTIATION BAV19W VR = 100 V BAV20W VR = 150 V BAV21W VR = 200 V ORDERING CODE BAV19W-E3-08 or BAV19W-E3-18 BAV19W-HE3-08 or BAV19W-HE3-18 BAV20W-E3-08 or BAV20W-E3-18 BAV20W-HE3-08 or BAV20W-HE3-18 BAV21W-E3-08 or BAV21W-E3-18 BAV21W-HE3-08 or BAV21W-HE3-18 TYPE MARKING A8 A9 AA CIRCUIT CONFIGURATION Single REMARKS Tape and reel Single Tape and reel Single Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL Continuous reverse voltage Repetitive peak reverse voltage DC Forward current (1) Rectified current (average) half wave rectification with resist. load (1) BAV19W BAV20W BAV21W BAV19W BAV20W BAV21W VR VR VR VRRM VRRM VRRM IF IF(AV) Repetitive peak forward current (1) f  50 Hz,  = 180° IFRM Surge forward current t < 1 s, Tj = 25 °C IFSM Power dissipation (1) Ptot VALUE 100 150 200 120 200 250 250 200 625 1 410 UNIT V V V V V V mA mA mA A mW Rev. 1.6, 23-Feb-18 1 Document Number: 85725 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com BAV19W, BAV20W, BAV21W Vishay Semiconductors THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Thermal resistance junction to ambient air (1) Junction temperature (1) Storage temperature range (1) RthJA Tj Tstg Operating temperature range Top Note (1) Valid provided that leads are kept at ambient temperature VALUE 375 150 -65 to +150 -55 to +150 UNIT °C/W °C °C °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. Forward voltage IF = 100 mA VF IF = 200 mA VF VR = 100 V BAV19W IR VR = 100 V, Tj = 100 °C BAV19W IR Leakage current VR = 150 V BAV20W IR VR = 150 V, Tj = 100 °C BAV20W IR VR = 200 V BAV21W IR VR = 200 V, Tj = 100 °C BAV21W IR Dynamic forward resistance IF = 10 mA rf 5 Diode capacitance VR = 0, f = 1 MHz CD 1.5 Reverse recovery time IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100  trr MAX. 1 1.25 100 15 100 15 100 15 50 UNIT V V nA μA nA μA nA μA  pF ns I F - Forward Current (mA) IO , I F - Admissible Forward Current (A) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 0.3 100 Tj = 100 °C 0.2 10 25 °C DC current IF 1 Current (rectif.) IO 0.1 0.1 0.01 0 18858 0.2 0.4 0.6 0.8 1 VF - Forward Voltage (V) 0 0 18859 30 60 90 120 150 Tamb - Ambient Temperature (°C) Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Admissible Forward Current vs. Ambient Temperature Rev. 1.6, 23-Feb-18 2 Document Number: 85725 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com BAV19W, BAV20W, BAV21W Vishay Semiconductors Ptot - Admissible Power Dissipation (mW) 500 400 300 200 100 0 0 18860 40 80 120 160 200 Tamb - Ambient Temperature (°C) Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 100 rf - Dynamic Forward Resistance (Ω) 10 1 1 18861 10 100 IF - Forward Current (mA) Fig. 4 - Dynamic Forward Resistance vs. Forward Current 100 1000 IR(Tj)/IR (25 °C) - Leakage Current 100 10 1 0.1 0 18862 Reverse Voltage BAV19W VR = 100 V BAV20W VR = 150 V BAV21W VR = 200 V 40 80 120 160 200 Tj - Junction Temperature (°C) Fig. 5 - Leakage Current vs. Junction Temperature CD - Diode Capacitance (pF) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 18863 Tj = 25 ° C 1 10 100 VR - Reverse Voltage (V) Fig. 6 - Capacitance vs. Reverse Voltage 10 IFSM (A) 1 TJ = 25 °C - Prior to Surge 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 tp - Test Pulse (s) Fig. 7 - Non-Repetitive Peak Forward Current vs. Pulse Duration Maximum Admissible Values of Square Pulse Rev. 1.6, 23-Feb-18 3 Document Number: 85725 For te.


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