BAS70-04LT1G, SBAS70-04LT1G
Dual Series Schottky Barrier Diode
These Schottky barrier diodes are designed for high spee...
BAS70-04LT1G, SBAS70-04LT1G
Dual Series
Schottky Barrier Diode
These
Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
Features
Extremely Fast Switching Speed Low Forward Voltage These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Non−Repetitive Peak Forward Surge Current (t ≤ 1.0 s)
VR 70 V IFSM 100 mA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Forward Power Dissipation @ TA = 25°C Derate above 25°C
PF 225 mW 1.8 mW/°C
Operating Junction and Storage Temperature Range
TJ, Tstg −55 to +150
°C
Thermal Resistance Junction−to−Ambient
RqJA
508 (Note 1)
311 (Note 2)
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ minimum pad. 2. FR−4 @ 1.0 x 1.0 in pad.
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70 VOLTS
SCHOTTKY BARRIER DIODE
ANODE 1
CATHODE...
