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1S1829

Toshiba Semiconductor

Silicon Rectifier

TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1S1829,1S1886 GENERAL PURPOSE RECTIFIER APPLICATIONS 1S1829,1S1886 Unit: mm l ...


Toshiba Semiconductor

1S1829

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Description
TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1S1829,1S1886 GENERAL PURPOSE RECTIFIER APPLICATIONS 1S1829,1S1886 Unit: mm l Average Forward Current l Repetitive Peak Reverse Voltage l Plastic Mold Package : IF (AV) = 1.0A (Ta = 65°C) : VRRM = 200, 800V MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Reverse Voltage 1S1886 1S1829 Average Forward Current (Ta = 60°C) Peak One Cycle Surge Forward Current 1S1829 1S1886 Junction Temperature Storage Temperature Range SYMBOL VRRM IF (AV) IFSM Tj Tstg RATINGS 200 800 1.0 45 (50Hz) 60 (50Hz) −40~150 −40~150 ELECTRICAL CHARACTERISTICS (Ta = 25°C) UNIT V A A °C °C JEDEC JEITA TOSHIBA Weight: 0.42g DO−15 SC−39 3−3B1A CHARACTERISTIC Peak ForwardVoltage Repetitive Peak Reverse Current Thermal Resistance (Junction to Ambient) SYMBOL TEST CONDITION VFM IRRM (1) IRRM (2) Rth (j−a) IFM = 1.5A VRRM = Rated VRRM = Rated, Tj = 150°C DC MIN MAX UNIT ― 1.2 V ― 10 µA ― 400 ― 100 °C / W MARKING 1 2001-07-09 1S1829,1S1886 2 2001-07-09 1S1829,1S1886 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a mal...




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