MBR2060CT

High-Voltage Schottky Diodes ■ Productor Character ● Half Bridge Rectified、Common Cathode Structure. ● Multilayer Metal -Silicon Potential Structure. ● Beautiful High Temperature Character. ● Have Over Voltage protect loop，high reliability. ● RoHs Product. MBR2060CT/MBR2060FCT ■Primary Use ● Low Voltage High Frequency Switching Power Supply. ● Low Voltage High Frequency Invers Circuit. ● Low Voltage Continued Circuit and Protection Circuit. ■Summarize ● MBR2060CT/MBR2060FCT Device optimized for ultra-low forward voltage drop to maximize efficiency in Power Supply applications. Device Weight : ITO-220AB-1.48g TO-220AB-1.96g TO-263-1.78g PIN2 PIN3 Absolute Maximum Ratings Item Maximal Inverted Repetitive Peak Voltage *Average Rectified Forward Current (Rated VR-20Khz Square Wave) - 50% duty cycle Typical Thermal Resistance (per leg) Package =TO-220AB/TO-263 Package =ITO-220AB Forward Peak Surge Current(Rated Load 8.3 Half Mssine Wave-According to JEDEC Method) Maximum Rate of Voltage Change ( at Rated VR ) Peak Repetitive Reverse Surge Current (2uS-1Khz) Operating Junction Temperature Storage Temperature Electricity Character Item Test Condition IR TJ =25℃ TJ =125℃ VR=VRRM VF TJ =25℃ TJ =125℃ IF=10A IF=10A *IF(AV)= 10A×2 TYP. 0.58 www.asemi88.com PIN1 Symbol VRRM IFAV RθJc IFSM dv/dt IRRM TJ TSTG Data 60 20 2 4 150 10000 1 -40- +150 -40- +150 Unit V A ℃/W ℃/W A V/uS A ℃ ℃ MAX. 20 2 0.63 0.51 Unit uA mA V V If, Instantaneous Forward Current (A) High-Vo...