SBL3030CT

SBL3030CT thru SBL3040CT Low VF Schottky Barrier Rectifiers C(TAB) AC A A C A A=Anode, C=Cathode, TAB=Cathode SBL3030CT SBL3040CT VRRM V 30 40 VRMS V 21 28 VDC V 30 40 Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=100oC IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) VF Maximum Forward Voltage At 15.0A DC (Note1) @TJ=25oC IR Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25oC @TJ=100oC CJ ROJC TJ TSTG Typical Junction Capacitance Per Element (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range NOTES: 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 3. Thermal Resistance Junction To Case. Maximum Ratings 30 250 0.55 1.0 75 450 1.5 -55 to +125 -55 to +150 Unit A A V mA pF oC/W oC oC FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacit...