POWER MOSFET
SMPS MOSFET
PD - 95619
IRFB16N50KPbF
Applications
l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l ...
Description
SMPS MOSFET
PD - 95619
IRFB16N50KPbF
Applications
l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency
Circuits
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage and Current
l Low RDS(on)
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation
VGS
dv/dt TJ TSTG
Linear Derating Factor Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÃcIAR Avalanche Current
cEAR Repetitive Avalanche Energy
Thermal Resistance
Parameter
RθJC RθCS RθJA
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Document Number: 91096
HEXFET® Power MOSFET
VDSS RDS(on) typ. ID
500V
285m:
17A
S D G TO-220AB
Max. 17 11 68 280 2.3 ± 30 11
-55 to + 150
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W W/°C
V V/ns
°C
Typ. ––– ––– –––
Max. 310 17 28
Units mJ A mJ
Typ. ––– 0.50 –––
Max. 0.44 ––– 62
Units °C/W
8/2/04 www.vishay.com
1
IRFB16N50KPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max...
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