TXY8205A

Dual N-Channel High Density Trench MOSFET N TYPE BVDSS - TXY8205A 20V ID 6A RDS(ON) (Typ.) () 23mΩ @VGS=4.5V 34mΩ @VGS=2.5V FEATURES High density cell trench design for low RDS(ON) Rugged and reliable Surface mount package Lead Free available(Green Product) PIN CONFIGURATION TXY8205A ORDERING INFORMATION Device Package TXY8205A TSSOP-8 Packing Tape Reel www.tmos.com.tw 1 DS-Rev-1.4 TXY8205A ABSOLUTE MAXIMUM RATINGS (TA = 25 ℃ unless otherwise specified) Symbol Parameter Value VDSS Drain-Source Voltage (VGS=0V ) - 20 VGSS ID (a) Gate- source Voltage - Drain Current (continuous) at TC = 25℃ at TC = 70℃ ±12 6 4 IDM (b) Drain Current (pulsed) 28 Power Dissipation Ptot 2.0 Tj , Tstg Operating Junction and Storage Temperature Range - 55~150 (a) Current limited by package (b) Pulse test: Pulse width≦300us, duty cycle≦2% ：≦300us，≦2％ THERMAL DATA RθJA Thermal Resistance – Junction to Ambient - 62.5 Unit V A W ℃ ℃ /W ELECTRICAL CHARACTERISTICS (TA = 25 ℃ unless otherwise specified) OFF Symbol Parameter Test Conditions Min Typ BVDSS Drain-source Breakdown Voltage - ID = 250 uA , VGS = 0V 20 -- Zero Gate Voltage Drain Current IDSS VDS = 16V -- -- Gate-Body Leakage Current IGSS VGS =±12V -- -- Max -- 1 ±100 Unit V uA nA www.tmos.com.tw 2 DS-Rev-1.4 ELECTRICAL CHARACTERISTICS (continued) ON Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS , ID = ...