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1R5NH41

Toshiba Semiconductor

Silicon Rectifier

1R5NH41 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1R5NH41 SWITCHING MODE POWER SUPPLY APPLICATIONS l Repet...


Toshiba Semiconductor

1R5NH41

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Description
1R5NH41 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1R5NH41 SWITCHING MODE POWER SUPPLY APPLICATIONS l Repetitive Peak Reverse Voltage l Average Forward Current l Very Fast Reverse−Recovery Time : VRRM = 1000V : IF (AV) = 1.5A : trr = 400ns (Max) Unit: mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Reverse Voltage Average Forward Current (Ta = 25°C) Peak One Cycle Surge Forward Current (Non−Repetitive) Junction Temperature Range Storage Temperature Range SYMBOL VRRM IF (AV) IFSM Tj Tstg RATING 1000 1.5 80 (50Hz) 88 (60Hz) −40~150 −40~150 UNIT V A A °C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C) JEDEC JEITA TOSHIBA Weight: 0.47g − − 3−4B1A CHARACTERISTIC Peak Forward Voltage Repetitive Peak Reverse Current Reverse Recovery Time Forward Recovery Time Thermal Resistance SYMBOL TEST CONDITION VFM IFM = 1.5A IRRM VRRM = 1000V trr tfr Rth (j−a) IF = 1A, di / dt = −30A / µs IF = 1.0A Junction to Ambient MIN TYP. MAX UNIT − − 1.3 V − − 10 µA − − 400 ns − − 750 ns − − 65 °C / W MARKING 1 2001-07-09 1R5NH41 2 2001-07-09 1R5NH41 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe desig...




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