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SD101AW

GME

Schottky Barrier Diode

Schottky Barrier Diode FEATURES z Low Forward Voltage Drop. z Guard Ring Construction For Transient Protection. z Neglig...


GME

SD101AW

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Description
Schottky Barrier Diode FEATURES z Low Forward Voltage Drop. z Guard Ring Construction For Transient Protection. z Negligible Reverse Recovery Time. Production specification SD101AW/SD101BW/SD101CW Pb Lead-free APPLICATIONS z Schotty barrier switching. SOD-123 ORDERING INFORMATION Type No. Marking SD101AW SD101BW SD101CW S1 S2 S3 Package Code SOD-123 SOD-123 SOD-123 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol SD101AW SD101BW SD101CW Unit Peak Repetitive Peak reverse voltage VRR Working Peak DC Reverse Voltage VRWM 60 50 40 V VR RMS Reverse Voltage VR(RMS) 42 35 28 V Forward Continuous Current IFM 15 mA Repetitive Peak Forward Current @t<1.0s @t=10μs IFRM 50 2.0 mA A Power Dissipation Pd 400 mW Thermal Resistance Junction to Ambient Storage temperature RθjA Tstg 300 -65 to +125 ℃/W ℃ A013 Rev.A www.gmicroelec.com 1 Production specification Schottky Barrier Diode SD101AW/SD101BW/SD101CW ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Reverse Breakdown Voltage SD101AW SD101BW SD101CW Forward voltage SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW Reverse current SD101AW SD101BW SD101CW Capacitance between terminals SD101AW SD101BW SD101CW Symbol V(BR)R VF Min. 60 50 40 Typ. Max. 0.41 0.40 0.39 1.00 0.95 0.90 IRM 0.2 2.0 CT 2.1 2.2 Unit V V μA pF Reverse Recovery Time trr 1.0 ns Conditions IR=10μA IR=10μA IR=10μA IF=1.0mA IF=1.0mA IF=1.0mA IF=15mA IF=15mA IF=1...




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