2N7002K

SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage VDSS 60 Gate-Source Voltage VGSS 20 Continuous ID 300 Drain Current Pulsed (Note 1) IDP 1200 Drain Power Dissipation (Note 2) PD 300 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note 1) Pulse Width 10 , Duty Cycle 1% Note 2) Package mounted on a glass epoxy PCB(100mm2 1mm) UNIT V V mA mW EQUIVALENT CIRCUIT D G A G H D 2N7002K N Channel MOSFET ESD Protected 2000V E L BL 23 1 PP M 1. SOURCE 2. GATE 3. DRAIN DIM A B C D E G H J K L M N P MILLIMETERS 2.93+_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 SOT-23 C N K J Marking WCType Name Lot No. S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse SYMBOL BVDSS IDSS IGSSF IGSSR TEST CONDITION VGS=0V, ID=10 A VDS=60V, VGS=0V VGS=20V, VDS=0V VGS=-20V, VDS=0V MIN. 60 - TYP. - MAX. 1 10 -10 UNIT V A A A 2009. 11. 17 Revision No : 2 1/4 2N7002K ELECTRICAL CHARACTERISTICS (Ta=25 ) ON CHARACTERISTICS (Note 3) CHARACTERISTIC SYMBOL Gate Threshold Voltage Vth Drain-So...