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2N7002K

Part Number	2N7002K
Manufacturer	JCST
Description	N-channel MOSFET
Published	Nov 25, 2015
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET FEATURE...
Datasheet	2N7002K PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z ESD protected up to 2KV Marking: 72K MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V ID Drain Current 340 mA PD Power Dissipation 0.
35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RθJA Thermal Resistance fromJunction to Ambient 357 ℃ /W SOT-23 1.
GATE 2.
SOURCE 3.
DRAIN Equivalent circuit MOSFET ELECTRICAL CHARA...

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