Document
STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
Features
Order codes VDSS
RDS(on) max
RDS(on)*Qg
ID
STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80
< 0.40 Ω
14Ω*nC
11 A
■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry
Applications
■ Switching applications
Description
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
3 1
D²PAK
3 2 1
TO-220FP
123
I²PAK
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
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Table 1. Device summary Order codes STB11NM80 STF11NM80 STI11NM80 STP11NM80 STW11NM80
Marking B11NM80 F11NM80 I11NM80 P11NM80 W11NM80
Package D²PAK
TO-220FP I²PAK TO-220 TO-247
Packaging Tape and reel
Tube
September 2011
Doc ID 9241 Rev 11
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www.st.com
22
Contents
Contents
STB/F/I/P/W11NM80
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
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STB/F/I/P/W11NM80
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS VGS ID ID IDM(2) PTOT
Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC=100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor
VISO Insulation withstand voltage (DC) TJ Operating junction temperature Tstg Storage temperature
1. Limited only by the maximum temperature allowed 2. Pulse width limited by safe operating area
Value
D²PAK, I²PAK TO-220, TO-247
800 ±30 11 8 44 150 1.2
Unit TO-220FP
11 (1) 8 (1) 44 (1) 35 0.28 2500
V V A A A W W/°C V
-65 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Value Unit
D²PAK TO-220FP I²PAK TO-220 TO-247
Rthj-case
Thermal resistance junction-case max
Rthj-a
Thermal resistance junctionambient max
Rthj-pcb(1)
Thermal resistance junction-pcb max
Tl
Maximum lead temperature for soldering purpose
0.83 30
3.6 0.83 °C/W 62.5 50 °C/W °C/W 300 °C
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4. Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max)
Single pulse avalanche energy EAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value 2.5 400
Unit A mJ
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Electrical characteristics
2 Electrical characteristics
STB/F/I/P/W11NM80
(TCASE= 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage (VGS = 0)
dv/dt (1) Drain source voltage slope
IDSS
IGSS VGS(th) RDS(on)
Zero gate voltage drain current (VGS = 0)
Gate body leakage current (VDS = 0)
Gate threshold voltage
Static drain-source on resistance
ID = 250 µA
VDD = 640 V, ID = 11 A, VGS = 10 V VDS = 800 V, VDS = 800 V @125°C
VGS = ±30 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 5.5 A
1. Characteristic value at turn off on inductive load
Min. Typ. Max. Unit 800 V
30 V/ns 10 µA 100 µA 100 nA
34 5V 0.35 0.40 Ω
Table 6. Symbol
Dynamic Parameter
Test conditions
gfs (1)
Ciss Coss Crss
Forward transconductance
Input capacitance Output capacitance Reverse transfer capacitance
VDS > ID(on) x RDS(on)max, ID= 7.5 A
VDS =25 V, f=1 MHz, VGS=0
Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge
Rg Gate input resistance
VDD=640 V, ID = 11 A VGS =10 V (see Figure 18)
f=1MHz Gate DC Bias=0 Test signal level=20 mV open drain
td(on) tr
td(off) tf
Turn-on delay time Rise time Turn-off delay time Fall time
VDD=400 V, ID= 5.5 A, RG=4.7 Ω, VGS=10 V (see Figure 17)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit -8- S
1630 - 750 -
30
43.6 - 11.6 -
21
pF pF pF
nC nC nC
- 2.7 -
Ω
22 ns 17 ns -46 ns 15 ns
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STB/F/I/P/W11NM80
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD .