DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
MBD128
1PS88SB48 Schottky barrier diodes
Product specification Superse...
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
MBD128
1PS88SB48
Schottky barrier diodes
Product specification Supersedes data of 1998 Aug 05 1999 Apr 26
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES Ultra fast switching speed Low forward voltage Small SMD package Guard ring protected Absorbs very high surge pulse Low capacitance. APPLICATIONS High speed switching Circuit protection Voltage clamping. DESCRIPTION The 1PS88SB48 consists of two dual high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SMD SC-88 plastic package.
1 Top view 2 3
MSA370
1PS88SB48
PINNING PIN 1 2 3 4 5 6 anode (a1) anode (a2) common cathode (k1) anode (a3) anode (a4) common cathode (k2) DESCRIPTION
6
5
4
handbook, halfpage
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5
4
1
2
3
MGL160
Marking code: 8t5.
Fig.1 Simplified outline (SC-88) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF IFRM IFSM Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.5 tp < 10 ms − − − − −65 − −65 40 120 120 200 +150 150 +150 V mA mA mA °C °C °C PARAMETER CONDITIONS MIN. MAX. UNIT
1999 Apr 26
2
Philips Semiconductors
Product specification
Schottky barrier diodes
ELECTRICAL CHARACTERISTICS Tamb = 25 °C un...