1PS76SB62

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 1PS76SB62 Schottky barrier diode Product specification 2001 Feb 16 Philips Semiconductors Product specification Schottky barrier diode FEATURES Ultra high switching speed Very low capacitance High breakdown voltage Guard ring protected Two pin very small plastic SMD package. olumns 1PS76SB62 PINNING PIN 1 2 DESCRIPTION cathode anode 1 2 APPLICATIONS Ultra high-speed switching High frequency applications. Marking code: S6. MGU328 DESCRIPTION Epitaxial Schottky barrier diode encapsulated in a SOD323 (SC-76) very small plastic SMD package. ESD sensitive device, observe handling precautions. Fig.1 Simplified outline (SOD323; SC-76) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF Tstg Tj Tamb continuous reverse voltage continuous forward current storage temperature junction temperature operating ambient temperature PARAMETER − − −65 − −65 MIN. MAX. 40 20 +150 125 +125 V mA °C °C °C UNIT ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF IR Cd Note 1. Pulse test: pulse width = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD323 (SC-76) standard mounting conditions. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 450 UNIT K/W PARAMETER forward voltage reverse current diode capacitance CONDITIONS IF = 2 mA; see Fig.2; note 1 VR = 40 V; see Fig.3; note 1 VR = 0 V;...