1PS75SB45

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 1PS75SB45 Schottky barrier double diode Product specification Supersedes data of 1997 Nov 07 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier double diode FEATURES Low forward voltage Guard ring protected Ultra small plastic SMD package Low diode capacitance. handbook, halfpage 1PS75SB45 DESCRIPTION Planar Schottky barrier double diode encapsulated in a SOT416 (SC75) ultra small plastic SMD package. 3 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes. Marking code: 45. 1 Top view 2 1 2 MAM377 Fig.1 Simplified outline SOT416; (SC75) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF IFRM IFSM Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.5 tp < 10 ms − − − − −65 − −65 40 120 120 200 +150 150 +150 V mA mA mA °C °C °C PARAMETER CONDITIONS MIN. MAX. UNIT 1999 Apr 26 2 Philips Semiconductors Product specification Schottky barrier double diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per diode VF continuous forward voltage see Fig.2 IF = 1 mA IF = 10 mA IF = 40 mA IR τ Cd Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to ...