C1827

Inchange Semiconductor wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors DESCRIPTION With TO-220 package Complement to type 2SA769 Collector current :IC=4A Collector dissipation :PC=30W@TC=25 APPLICATIONS For use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Product Specification 2SC1827 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current (DC) PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE UNIT 80 V 80 V 5V 4A 30 W 150 -55~150 Inchange Semiconductor wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 V(BR)CBO Collector-base breakdown voltage IC=0.1mA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A ICBO Collector cut-off current VCB=80V;IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=1A ; VCE=4V fT Transition frequency IC=0.5A ; VCE=2V Product Specification 2SC1827 MIN TYP. MAX UNIT 80 V 80 V 5V 1.0 V 1.5 V 10 A 10 A 60 240 8 MHz 2 Inchange Semic...